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DOD - SMD 5962-89943 - MICROCIRCUITS, MEMORY, DIGITAL, CMOS, 4K X 9 PARALLEL-SERIAL FIFO, MONOLITHIC SILICON Organization: DOD
Date: 2011-04-01
Description: The complete PIN shall be as shown in the following example: The device type(s) shall identify the circuit function as follows: Device type Generic number Circuit function Access time 01 (see 6.6) 4k × 9-bit parallel-serial FIFO 120 ns 02 (see 6.6) 4k × 9-bit parallel-serial FIFO 80 ns 03 (see 6.6) 4k × 9-bit parallel-serial FIFO 65 ns 04 (see 6.6) 4k × 9-bit parallel-serial FIFO 50 ns 05 (see 6.6) 4k × 9-bit parallel-serial FIFO 40 ns The case outline(s) shall be as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style Q GDIP1-T40 or CDIP2-T40 40 Dual-in-line X CQCC1-N44 44 Square leadless chip carrier The lead finish shall be as specified in MIL-STD-883 (see 3.1 herein).
DOD - SMD 5962-94511 - MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 4K X 9 PARALLEL SYNCHRONOUS FIFO, MONOLITHIC SILICON Organization: DOD
Date: 2009-11-20
Description: The device type(s) shall identify the circuit function as follows: Device type Generic number 1/ Circuit function Access time 01 4K × 9 CMOS Parallel Synchronous FIFO 50 ns 02 4K × 9 CMOS Parallel Synchronous FIFO 35 ns 03 4K × 9 CMOS Parallel Synchronous FIFO 25 ns 04 4K × 9 CMOS Parallel Synchronous FIFO 20 ns The device class designator shall be a single letter identifying the product assurance level as follows: Device class Device requirements documentation M Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q or V Certification and qualification to MIL-PRF-38535 The case outline(s) shall be as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style X CQCC1-N32 32 Rectangular leadless chip carrier The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for device class M.
DOD - SMD 5962-90715 - MICROCIRCUIT, MEMORY, DIGITAL, CMOS 4K X 9 FIFO, MONOLITHIC SILICON Organization: DOD
Date: 2013-07-25
Description: This drawing documents two product assurance class levels consisting of high ...
DOD - SMD 5962-95627 - MICROCIRCUIT, MEMORY, DIGITAL, 1024 X 18 CLOCKED FIFO, MONOLITHIC SILICON Organization: DOD
Date: 2011-04-05
Description: This drawing documents three product assurance class levels consisting of spa...
DOD - SMD 5962-86846 - MICROCIRCUIT, DIGITAL, CMOS 64 X 5 PARALLEL FIFO, MONOLITHIC SILICON Organization: DOD
Date: 2009-06-15
Description: This drawing describes device requirements for MIL-STD-883 compliant, non-JAN...
DOD - SMD 5962-93008 - MICROCIRCUIT, MEMORY, DIGITAL, CMOS 16K X 9 FIFO, MONOLITHIC SILICON Organization: DOD
Date: 2013-02-04
Description: This drawing documents two product assurance class levels consisting of high ...
DOD - SMD 5962-89536 - MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 1K X 9 FIFO, MONOLITHIC SILICON Organization: DOD
Date: 2015-01-26
Description: This drawing describes device requirements for MIL-STD-883 compliant, non-JAN...
DOD - SMD 5962-93152 - MICROCIRCUIT, DIGITAL, CMOS, 32K X 9 FIFO, MONOLITHIC SILICON Organization: DOD
Date: 2015-02-02
Description: This drawing documents two product assurance class levels consisting of high ...
DOD - SMD 5962-89567 - MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 2K X 9 FIFO, MONOLITHIC SILICON Organization: DOD
Date: 2015-11-04
Description: This drawing describes device requirements for MIL-STD-883 compliant, non-JAN...
DOD - SMD 5962-89568 - MICROCIRCUITS, MEMORY, DIGITAL, CMOS, 4K X 9 FIFO, MONOLITHIC SILICON Organization: DOD
Date: 2016-03-10
Description: This drawing documents two product assurance class levels consisting of high ...
DOD - SMD 5962-96602 - MICROCIRCUIT, DIGITAL, RADIATION HARDENED CMOS, FIFO REGISTER, MONOLITHIC SILICON Organization: DOD
Date: 2016-07-01
Description: This drawing documents two product assurance class levels consisting of high ...
DOD - SMD 5962-92321 - MICROCIRCUIT, MEMORY, DIGITAL, CMOS 2K X 9 BIDIRECTIONAL FIFO, MONOLITHIC SILICON Organization: DOD
Date: 2008-03-03
Description: This drawing documents two product assurance class levels consisting of high ...
DOD - SMD 5962-96509 - MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 512 X 18 X 2 FIFO, MONOLITHIC SILICON Organization: DOD
Date: 2013-12-13
Description: This drawing documents two product assurance class levels consisting of high ...
DOD - SMD 5962-95628 - MICROCIRCUIT, MEMORY, DIGITAL, CMOS 512 X 36 X 2 CLOCKED FIFO, MONOLITHIC SILICON Organization: DOD
Date: 2014-01-31
Description: This drawing documents three product assurance class levels consisting of hig...
MSFC-PROC-1367 - BURST AND TRANSIENT SOURCE EXPERIMENT CENTRAL ELECTRONICS UNIT FIFO BOARD ASSEMBLY TEST PROCEDURE Organization: MSFC
Date: 1986-08-01
DOD - SMD 5962-94588 - MICROCIRCUIT, MEMORY, DIGITAL, CMOS 32K X 9 FIFO WITH PROGRAMMABLE FLAGS, MONOLITHIC SILICON Organization: DOD
Date: 2013-03-07
Description: This drawing documents two product assurance class levels consisting of high ...
DOD - SMD 5962-93189 - MICROCIRCUIT, MEMORY, CMOS, 4K X 18 PARALLEL SYNCHRONOUS, FIFO, MONOLITHIC SILICON Organization: DOD
Date: 2013-03-25
Description: This drawing documents two product assurance class levels consisting of high ...
DOD - SMD 5962-93124 - MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 2K X 9 PARALLEL FIFO, MONOLITHIC SILICON Organization: DOD
Date: 2011-01-20
Description: This drawing documents two product assurance class levels consisting of high ...
DLA - DSCC-VID-V62/03626 - MICROCIRCUIT, DIGITAL-LINEAR, 3.3 V DUAL UNIVERSAL ASYNCHRONOUS RECEIVER/TRANSMITTER WITH 64 BYTE FIFO, MONOLITHIC SILICON Organization: DLA
Date: 2003-03-20
DOD - SMD 5962-89661 - MICROCIRCUIT, MEMORY, DIGITAL, CMOS, CASCADABLE 64 X 9 FIFO, MONOLITHIC SILICON Organization: DOD
Date: 2011-01-28
Description: This drawing describes device requirements for MIL-STD-883 compliant, non-JAN...

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