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3.1 The oxidation of silicon carbide refractories at elevated temperatures is an important consideration in the application of these refractories. The product of oxidation is amorphous silica or cristobalite, depending upon the temperature at which oxidation takes place. This oxide formation...
3.1 The oxidation of silicon carbide refractories at elevated temperatures is an important consideration in the application of these refractories. The product of oxidation is amorphous silica or cristobalite, depending upon the temperature at which oxidation takes place. This oxide formation...
This document sets out the characteristics of instruments used for X-ray powder diffraction ("powder" as defined in EN 13925-1:2003, Clause 5) as a basis for their control and hence quality assurance of the measurements made by this technique. Performance testing indicators are given for...
The oxidation of silicon carbide refractories at elevated temperatures is an important consideration in the application of these refractories. The product of oxidation is amorphous silica or cristobalite, depending upon the temperature at which oxidation takes place. This oxide formation is...
This test method covers the direct measurement of the sheet resistance and its variation for all but the periphery (amounting to three probe separations) for circular conducting layers pertinent to silicon semiconductor technology. These layers may be fabricated on substrates of any diameter...
1.1 This test method covers the direct measurement of the sheet resistance and its variation for all but the periphery (amounting to three probe separations) for circular conducting layers pertinent to silicon semiconductor technology. These layers may be fabricated on substrates of any...
The oxidation of silicon carbide refractories at elevated temperatures is an important consideration in the application of these refractories. The product of oxidation is amorphous silica or cristobalite, depending upon the temperature at which oxidation takes place. This oxide formation is...
This standard was transferred to SEMI (www.semi.org) May 2003 1.1 This test method covers the direct measurement of the sheet resistance and its variation for all but the periphery (amounting to three probe separations) for circular conducting layers pertinent to silicon semiconductor...