Find the standard you are looking for at Engineering360. Documents are available for purchase from the IHS Standards Store.

1 - 20 of 24 results

ETSI - TS 102 600 - SMART CARDS; UICC-TERMINAL INTERFACE; CHARACTERISTICS OF THE USB INTERFACE - V10.0.0; RELEASE 10 Organization: ETSI
Date: 2010-10-01
Description: The present document specifies the Inter-Chip USB interface between the USB UICC and the USB UICC-enabled terminal, subsequently referred to as the IC USB interface. It describes: • the characteristics of the Inter-Chip USB electrical interface between the USB UICC and the USB UICC-enabled terminal; • the initial communication establishment and the transport protocols; • the communication layers between the USB UICC and the USB UICC-enabled terminal.
ETSI - TS 102 922-2 - SMART CARDS; TEST SPECIFICATION FOR THE ETSI ASPECTS OF THE IC_USB INTERFACE; PART 2: UICC FEATURES - V7.0.0; RELEASE 7 Organization: ETSI
Date: 2011-03-01
Description: The present document specifies the test cases for: • the characteristics of the Inter-Chip USB electrical interface between the USB UICC and the USB UICCenabled terminal; • the initial communication establishment and the transport protocols; • the communication layers between the USB UICC and the USB UICC-enabled terminal.
ETSI - TS 102 922-1 - SMART CARDS; TEST SPECIFICATION FOR THE ETSI ASPECTS OF THE IC_USB INTERFACE; PART 1: TERMINAL FEATURES - V7.2.0; RELEASE 7; INCLUDES DISKETTE Organization: ETSI
Date: 2011-11-01
Description: The present document specifies the test cases for: • the characteristics of the Inter-Chip USB electrical interface between the USB UICC and the USB UICC-enabled terminal; • the initial communication establishment and the transport protocols; • the communication layers between the USB UICC and the USB UICC-enabled terminal.
IEEE 1596 - STANDARD FOR SCALABLE COHERENT INTERFACE (SCI) - IEEE COMPUTER SOCIETY DOCUMENT Organization: IEEE
Date: 1992-03-19
Description: Because of the propagation delays introduced when signals cross chip boundaries, the fastest uniprocessor may be on one chip before long. Pipelining and similar large-mainframe tricks are already used extensively on single-chip processors.
CSA ISO/IEC 15205 - SBUS – CHIP AND MODULE INTERCONNECT BUS Organization: CSA
Date: 2002-01-01
Description: Scope and object SBus is a high performance computer I/O interface for connecting integrated circuits and SBus Cards to a computer system motherboard.
JEDEC JESD 51-51 - IMPLEMENTATION OF THE ELECTRICAL TEST METHOD FOR THE MEASUREMENT OF REAL THERMAL RESISTANCE AND IMPEDANCE OF LIGHT-EMITTING DIODES WITH EXPOSED COOLING Organization: JEDEC
Date: 2012-04-01
Description: The application of these measurement guidelines is recommended for packaged LEDs, 1) with a total electrical power consumption above 0.5 W, 2) which have energy conversion efficiency above 5%, and 3) that are powered by steady DC power (typically with forced constant forward current), regardless whether the LED device inside the package is realized as single chip or multi chip device. Further details of the definition of term LED or LED device used in this document are given in section 0.
WILEY - CMOS BIOMICROSYSTEMS: WHE - CMOS BIOMICROSYSTEMS: WHERE ELECTRONICS MEET BIOLOGY Organization: WILEY
Date: 2011-01-01
Description: Coverage includes: The potential behind new interfaces (with biology, microfluidics, microelectromechanical systems, photonics) that will carry circuit performance beyond standard CMOS chip microelectronics Fully integrated systems for neural signal recording Design considerations of low-power digital-integrated systems for the implantable medical application Affinity-based biosensors CMOS capacitive biointerfaces for lab-on-chip applications Advanced technologies for real-time monitoring and control in biomicrofluidics Integrated devices and many other emerging device structures needed in future micro/nanotechnologies Groundbreaking research in humans controlling biological organisms Complete with extensive cross-references, CMOS Biomicrosystems is a valuable resource for electrical, mechanical, materials science, and micro/nano engineers as well as researchers who focus on the integration of microelectronics.
DLA - SMD-5962-95789 REV A - MICROCIRCUIT, DIGITAL, RADIATION HARDENED, HIGH SPEED CMOS, 4-BIT PARALLEL ACCESS SHIFT REGISTER, MONOLITHIC SILICON Organization: DLA
Date: 1998-07-31
Description: The die details designation shall be a unique letter which designates the die's physical dimensions, bonding pad location(s) and related electrical function(s), interface materials, and other assembly related information, for each product and variant supplied to this appendix.
DLA - SMD-5962-95808 REV A - MICROCIRCUIT, DIGITAL, RADIATION HARDENED, HIGH SPEED CMOS, SYNCHRONOUS BCD DECADE UP/DOWN COUNTER, MONOLITHIC SILICON Organization: DLA
Date: 1998-07-31
Description: The die details designation shall be a unique letter which designates the die's physical dimensions, bonding pad location(s) and related electrical function(s), interface materials, and other assembly related information, for each product and variant supplied to this appendix.
DLA - SMD-5962-95806 REV A - MICROCIRCUIT, DIGITAL, RADIATION HARDENED, HIGH SPEED CMOS, BCD DECADE SYNCHRONOUS COUNTER, MONOLITHIC SILICON Organization: DLA
Date: 1998-07-14
Description: The die details designation shall be a unique letter which designates the die's physical dimensions, bonding pad location(s) and related electrical function(s), interface materials, and other assembly related information, for each product and variant supplied to this appendix.
DLA - SMD-5962-95790 REV A - MICROCIRCUIT, DIGITAL, RADIATION HARDENED, HIGH SPEED CMOS, DUAL 4-INPUT MULTIPLEXER, MONOLITHIC SILICON Organization: DLA
Date: 1998-07-31
Description: The die details designation shall be a unique letter which designates the die's physical dimensions, bonding pad location(s) and related electrical function(s), interface materials, and other assembly related information, for each product and variant supplied to this appendix.
DLA - SMD-5962-95778 REV A - MICROCIRCUIT, DIGITAL, RADIATION HARDENED, HIGH SPEED CMOS, DUAL 4-INPUT NAND GATE, MONOLITHIC SILICON Organization: DLA
Date: 1998-06-12
Description: The die details designation shall be a unique letter which designates the die's physical dimensions, bonding pad location(s) and related electrical function(s), interface materials, and other assembly related information, for each product and variant supplied to this appendix.
DLA - SMD-5962-96639 REV A - MICROCIRCUIT, DIGITAL, RADIATION HARDENED CMOS, DUAL 2 WIDE 2 INPUT AND-OR-INVERT GATE, MONOLITHIC SILICON Organization: DLA
Date: 1998-01-16
Description: The die details designation shall be a unique letter which designates the die's physical dimensions, bonding pad location(s) and related electrical function(s), interface materials, and other assembly related information, for each product and variant supplied to this appendix.
DLA - SMD-5962-96640 REV A - MICROCIRCUIT, DIGITAL, RADIATION HARDENED CMOS, EXPANDABLE 4-WIDE 2-INPUT AND-OR-INVERT GATE, MONOLITHIC SILICON Organization: DLA
Date: 1998-01-16
Description: The die details designation shall be a unique letter which designates the die's physical dimensions, bonding pad location(s) and related electrical function(s), interface materials, and other assembly related information, for each product and variant supplied to this appendix.
DLA - SMD-5962-95803 REV A - MICROCIRCUIT, DIGITAL, RADIATION HARDENED, HIGH SPEED CMOS, NONINVERTING QUAD BUFFER WITH THREE-STATE OUTPUTS, MONOLITHIC SILICON Organization: DLA
Date: 1998-07-14
Description: The die details designation shall be a unique letter which designates the die's physical dimensions, bonding pad location(s) and related electrical function(s), interface materials, and other assembly related information, for each product and variant supplied to this appendix.
DLA - SMD-5962-95811 REV A - MICROCIRCUIT, DIGITAL, RADIATION HARDENED, HIGH SPEED CMOS, 4-BIT FULL ADDER WITH FAST CARRY, MONOLITHIC SILICON Organization: DLA
Date: 1998-07-31
Description: The die details designation shall be a unique letter which designates the die's physical dimensions, bonding pad location(s) and related electrical function(s), interface materials, and other assembly related information, for each product and variant supplied to this appendix.
DLA - SMD-5962-95766 REV A - MICROCIRCUIT, DIGITAL, RADIATION HARDENED, HIGH SPEED CMOS, DUAL 4-INPUT AND GATE, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON Organization: DLA
Date: 1998-01-28
Description: The die details designation shall be a unique letter which designates the die's physical dimensions, bonding pad location(s) and related electrical function(s), interface materials, and other assembly related information, for each product and variant supplied to this appendix.
DLA - SMD-5962-95802 REV A - MICROCIRCUIT, DIGITAL, RADIATION HARDENED, HIGH SPEED CMOS, DUAL J-K FLIP-FLOP WITH SET AND RESET, MONOLITHIC SILICON Organization: DLA
Date: 1998-07-14
Description: The die details designation shall be a unique letter which designates the die's physical dimensions, bonding pad location(s) and related electrical function(s), interface materials, and other assembly related information, for each product and variant supplied to this appendix.
DLA - SMD-5962-98535 REV A - MICROCIRCUIT, DIGITAL, RADIATION HARDENED ADVANCED CMOS, 3-TO-8 LINE DECODER/DEMULTIPLEXER, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON Organization: DLA
Date: 1998-09-02
Description: The die details designation shall be a unique letter which designates the die's physical dimensions, bonding pad location(s) and related electrical function(s), interface materials, and other assembly related information, for each product and variant supplied to this appendix.
DLA - SMD-5962-95810 REV A - MICROCIRCUIT, DIGITAL, RADIATION HARDENED, HIGH SPEED CMOS, NONINVERTING OCTAL BUFFER/LINE DRIVER WITH THREE-STATE OUTPUTS, MONOLITHIC SILICON Organization: DLA
Date: 1998-07-31
Description: The die details designation shall be a unique letter which designates the die's physical dimensions, bonding pad location(s) and related electrical function(s), interface materials, and other assembly related information, for each product and variant supplied to this appendix.

1 - 20 of 24 results