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IEEE 256 - SEMICONDUCTOR DIODES Organization: IEEE
Date: 1963-12-01
Description: This Standard recommends and describes methods of measurement of the important electrical characteristics of semiconductor diodes. For the purpose of this Standard, a semiconductor diode is defined1 as: "A semiconductor device having two terminals and exhibiting a nonlinear voltage—current characteristic; in more restricted usage, a semiconductor device which has the asymmetrical voltage—current characteristic exemplified by a single p-n junction."
MODUK - DEF STAN 59-61: 90/007 - SEMICONDUCTOR DEVICE, DIODE - ISSUE 1 (11.70) Organization: MODUK
Date: 1970-01-01
Description: This specification covers the detail requirements for a Germanium mixer diode and is written in accordance with K1007, Issue 3, except where otherwise stated.
MODUK - DEF STAN 59-61: 90/003 - SEMICONDUCTOR DEVICE, DIODE - ISSUE 1 (11.69) Organization: MODUK
Date: 1969-01-01
Description: This specification covers the detail requirements for wire ended high voltage silico diode rectifiers and is in accordance with K1007, Issue 3 except where otherwise stated.
JEDEC JESD 282 - SILICON RECTIFIER DIODES - REVISION OF EIA-JESD282-B Organization: JEDEC
Date: 2002-11-01
Description: This standard provided definitions, electrical characteristics circuit technology, letter symbols and registration format for diodes and stacks. It also covers rating and characteristics, manufacturing and performance as well as test practices to demonstrate the performance of semiconductor rectifier diodes and rectifier stacks used for the conversion and/or control of electric power.
DELPHI-I - DELPHI DX650095 - HIGH VOLTAGE AVALANCHE DIODE Organization: DELPHI-I
Date: 2005-03-01
Description: This specification establishes the function, performance, reliability, validation testing, and production testing required of High Voltage Avalanche Diode. Product Mission The High Voltage Avalanche Diode blocks the transient (make) voltage at the start of dwell from an inductive discharge ignition coil.
WSPC - HI SPD DIDE LAS - HIGH SPEED DIODE LASERS Organization: WSPC
Date: 1998-01-15
Description: This book is composed of seven invited papers which present the current status of high speed diode lasers. Fast carrier and photon dynamics in directly modulated MQW lasers is analyzed and novel design approaches are considered which were critical for the demonstration and record of 40 GHz modulation bandwidth.
DS/IEC 747-3-1 - SEMICONDUCTOR DEVICES - DISCRETE DEVICES - PART 3: SIGNAL (INCLUDING SWITCHING) AND REGULATOR DIODES - SECTION 1: BLANK DETAIL SPECIFICATION FOR SIGNAL DIODES, SWITCHING DIODES AND CONTROLLED-AVALANCHE DIODES Organization: DS
Date: 1987-01-01
Description: The standard covers the specific requirements for quality aesessment of signal diodes switching diodes, and controlled-avalance diodes. (Also numbered QC 750001 in the IECQ system).
TSE - TS 7985 - SEMICONDUCTOR DEVICES DISCRETE DEVICES PART 3: SIGNAL (INCLUDING SWITCHING) AND REGULATOR DIODES SECTION ONE-BLANK DETAIL SPECIFICATION FOR SIGNAL DIODES, SWITCHING DIODES AND CONTROLLED AVALANCHE DIODES Organization: TSE
Date: 1990-02-22
Description: This standard applicable to quality assessment for signal diodes, Switching diodes and controlled avalanche diodes. Gives specific requirements (included in QC 750001 of the IECQ system), represents the blank detail specification.
DLA - MIL-S-19500/364 - SEMICONDUCTOR DEVICE, DIODE, GERMANIUM, MIXER TYPE IN1838 Organization: DLA
Date: 1966-10-10
Description: This specification covers the detail requirements for a germanium semiconductor mixer diode for low-noise performance in doppler-radar receivers at ku-band or below, employing audio frequency IF amplifiers.
TIA-455-130 - ELEVATED TEMPERATURE LIFE TEST FOR LASER DIODES Organization: TIA
Date: 2001-03-01
Description: This test is directed toward semiconductor laser diodes used in telecommunication applications for transmission or pumping purposes.
NPFC - MIL-PRF-19500/187 - SEMICONDUCTOR DIODE, DILICON, HIGH-VOLTAGE TYPE JAN1N2361 Organization: NPFC
Date: 2012-02-03
Description: This specification covers the performance requirements for silicon semiconductor diodes for use in high-voltage, rectifier circuits, and having the following particular characteristics.
WILEY - DIODE LASERS AND PHOTONIC - DIODE LASERS AND PHOTONIC INTEGRATED CIRCUITS - 2ND EDITION Organization: WILEY
Date: 2012-03-01
Description: Current and comprehensive coverage of fundamentals and advanced topics for students and professionals Owing to their small size and mass-producibility, high efficiency, and amazing useful life of hundreds of years, diode lasers remain essential in data transmission and data storage applications and consumer products, while appearing in new applications, like medical imaging and remote sensing.
DOD - DSCC-DWG-99008 - SEMICONDUCTOR DEVICE, DIODE, SILICON, MIXER, 1N26B FAMILY Organization: DOD
Date: 2008-02-22
Description: This drawing describes the requirements for silicon semiconductor diodes, types: 1N26B (forward polarity); 1N26BR (reverse polarity); 1N26BM (matched forward pair); and 1N26BMR (matched forward and reverse), for use as a mixer (first detector) in a K-band receiver.
DOD - DSCC-DWG-01038 - SEMICONDUCTOR DEVICE, PIN DIODE, SILICON, TYPE 1N5719 Organization: DOD
Date: 2008-08-18
Description: This drawing covers the detail requirements for a silicon pin diode. Two levels of product assurance are provided for each device type as specified in MIL-PRF-19500.
DS/IEC 747-2-1 - SEMICONDUCTOR DEVICES - DISCRETE DEVICES - PART 2: RECTIFIER DIODES - SECTION ONE: BLANK DETAIL SPECIFICATION FOR RECTIFIER DIODES (INCLUDING AVALANCHE RECTIFIER DIODES), AMBIENT AND CASE-RATED, UP TO 100A Organization: DS
Date: 1990-07-02
Description: This standard is a blank detail specification for rectifier diodes (including avalance rectifier diodes), ambient and case-rated, up til 100A
DS/IEC 747-4 - SEMICONDUCTOR DEVICES - DISCRETE DEVICES - PART 4: MICROWAVE DIODES AND TRANSISTORS Organization: DS
Date: 1992-02-10
Description: The present publication gives standards for the following catagories of discrete devices: -Variable capacitance diodes and snap-off diodes (for tuning, up-converter and harnobic multiplication, switching, limiting, phased shift, parametric amplification...). -Mixer diodes and detectors diodes. -Avalanche diodes (for direct harmonic generation, amplification...).
IEC 60747-2 - SEMICONDUCTOR DEVICES - PART 2: DISCRETE DEVICES - RECTIFIER DIODES - EDITION 3.0 Organization: IEC
Date: 2016-04-01
Description: This part of IEC 60747 provides standards for the following categories or sub-categories of rectifier diodes, including: • line rectifier diodes; • avalanche rectifier diodes; • fast-switching rectifier diodes; • Schottky barrier diodes.
IEC 60747-4 - SEMICONDUCTOR DEVICES – DISCRETE DEVICES – PART 4: MICROWAVE DIODES AND TRANSISTORS - EDITION 2.1; CONSOLIDATED REPRINT Organization: IEC
Date: 2017-01-01
Description: This part of IEC 60747 gives requirements for the following categories of discrete devices variable capacitance diodes and snap-off diodes (for tuning, up-converter or harmonic multiplication, switching, limiting, phased shift, parametric amplification) mixer diodes and detector diodes avalanche diodes (for direct harmonic generation, amplification) gunn diodes (for direct harmonic generation) bipolar transistors (for amplification, oscillation) field-effect transistors (for amplification, oscillation)
DS/IEC 747-3-2 - SEMICONDUCTOR DEVICES - DISCRETE DEVICES - PART 3: SIGNAL (INCLUDING SWITCHING) AND REGULATOR DIODES - SEKTION 2: BLANK DETAIL SPECIFICATION FOR VOLTAGE REGULATOR DIODES AND VOLTAGE REFERENCE DIODES, EXCLUDING TEMPERATURE COMPENSATED PRECISION REFERENCE DIODES Organization: DS
Date: 1987-01-01
Description: The standard covers the specific requirements for quality assessment of voltage-regulator diodes and voltage-reference diodes (Also numbered QC 750005 in IECQ system).
MODUK - DEF STAN 59-61: PART 2 - SEMICONDUCTOR DEVICES (LISTED ON EPIC DATABASE) PART 2: DIODES - ISSUE 3; 08.81; AMENDMENT 3 Organization: MODUK
Date: 1981-08-20
Description: This PART of the Defence Standard relates to semiconductor devices, diodes for Ministry of Defence use.

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