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ISO 13142 - Electro-optical systems - Cavity ring-down technique for highreflectance measurement
July 1, 2015 - ISO

This International Standard specifies measurement procedures for the precise determination of the high reflectance of optical laser components. Up to now, the ISO standardized testing methods for reflectance of optical laser components have the accuracy limit of approximately 0,01 % (for...

BS 4779 - Recommendations for Measurement of the optical transfer function of optical devices
November 10, 1971 - BSI

Adopts OTF measurement as an objective test method for ascertaining and expressing the performance of optical devices and systems, including image forming systems or assemblies and lenses but does not normally relate to the separate parts of a multi-component system. Specifically limited to tests...

ASTM F1619-95(2000)e1 - Standard Test Method for Measurement of Interstitial Oxygen Content of Silicon Wafers by Infrared Absorption Spectroscopy with p-Polarized Radiation Incident at the Brewster Angle (Withdrawn 2003)
September 15, 1995 - ASTM International

This standard was transferred to SEMI (www.semi.org) May 2003 1.1 This test method covers determination of the absorption coefficient due to the interstitial oxygen content of commercial monocrystalline silicon wafers by means of Fourier transform infrared (FT-IR) spectroscopy. In this test method,...

DSF/FPREN IEC 61496-3 - Safety of machinery – Electro-sensitive protective equipment – Part 3: Particular requirements for active opto-electronic protective devices responsive to diffuse Reflection (AOPDDR)
DS

This part of IEC 61496 specifies additional requirements for the design, construction and testing of electro-sensitive protective equipment (ESPE) designed specifically to detect persons or parts of persons as part of a safety related system, employing active opto electronic protective...

DS/CLC/TS 61496-3 - Safety of machinery – Electro-sensitive protective equipment – Part 3: Particular requirements for Active Opto-electronic Protective Devices responsive to Diffuse Reflection (AOPDDR)
July 4, 2008 - DS

Replacement: This part of IEC 61496 specifies additional requirements for the design, construction and testing of non-contact electro-sensitive protective equipment (ESPE) designed specifically to detect persons as part of a safety related system, employing active opto-electronic protective...

ASTM F1619 - Standard Test Method for Measurement of Interstitial Oxygen Content of Silicon Wafers by Infrared Absorption Spectroscopy with p-Polarized Radiation Incident at the Brewster Angle
September 15, 1995 - ASTM

This test method2 covers determination of the absorption coefficient due to the interstitial oxygen content of commercial monocrystalline silicon wafers by means of Fourier transform infrared (FT-IR) spectroscopy. In this test method, the incident radiation is p-polarized and incident on the test...

JIS B 9704-3 - Safety of machineryElectro- sensitive protective equipment- Part 3: Particular requirements for Active Opto-electronic Protective Devices responsive to Diffuse Reflection (AOPDDR)
April 25, 2011 - JSA

Replacement: This Standard specifies additional requirements for the design, construction and testing of non-contact electro-sensitive protective equipment (ESPE) designed specifically to detect persons as part of a safety related system, employing active opto-electronic protective devices...

ASTM F1526-95(2000) - Standard Test Method for Measuring Surface Metal Contamination on Silicon Wafers by Total Reflection X-Ray Fluorescence Spectroscopy (Withdrawn 2003)
January 1, 2000 - ASTM International

This standard was transferred to SEMI (www.semi.org) May 2003 1.1 This test method covers the quantitative determination of elemental areal density on the surface of polished single crystal silicon substrates using total reflection X-ray fluorescence spectroscopy (TXRF) with a monochromatic X-ray...

ASTM F1526 - Standard Test Method for Measuring Surface Metal Contamination on Silicon Wafers by Total Reflection X-Ray Fluorescence Spectroscopy
September 15, 1995 - ASTM

1. Scope 1.1 This test method covers the quantitative determination of elemental areal density on the surface of polished single crystal silicon substrates using total reflection X-ray fluorescence spectroscopy (TXRF) with a monochromatic X-ray source. 1.2 This test method can be used for both...

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