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SEMI - SEMI M15 - POLISHED WAFER DEFECT LIMITS TABLE FOR SEMI-INSULATING GALLIUM ARSENIDE WAFERS Organization: SEMI
SEMI - SEMI E106 - OVERVIEW GUIDE TO SEMI STANDARDS FOR PHYSICAL INTERFACES AND CARRIERS FOR 300 MM WAFERS Organization: SEMI
ASTM F534 - STANDARD TEST METHOD FOR BOW OF SILICON WAFERS Organization: ASTM
Date: 2002-12-10
Description: This test method is intended primarily for use with wafers that meet the dimension and tolerance requirements of SEMI Specifications M1.
ASTM F613 - STANDARD TEST METHOD FOR MEASURING DIAMETER OF SEMICONDUCTOR WAFERS Organization: ASTM
Date: 1993-01-01
Description: 1.4 This test method was developed for use with silicon wafers with standard diameters as given in SEMI Specifications M1, and may be used for wafers of other diameter or materials within the specified limit, provided suitable gage blocks are available and standard flat configurations are used.
ASTM F2074 - STANDARD GUIDE FOR MEASURING DIAMETER OF SILICON AND OTHER SEMICONDUCTOR WAFERS Organization: ASTM
Date: 2000-12-10
Description: It was developed for use with silicon wafers with standard diameter and flat positions as given in SEMI Specifications M1.
ASTM F533 - STANDARD TEST METHOD FOR THICKNESS AND THICKNESS VARIATION OF SILICON WAFERS Organization: ASTM
Date: 2002-12-10
Description: This test method is intended primarily for use with wafers that meet the dimension and tolerance requirements of SEMI Specifications M1.
ASTM F1451 - STANDARD TEST METHOD FOR MEASURING SORI ON SILICON WAFERS BY AUTOMATED NONCONTACT SCANNING Organization: ASTM
Date: 1992-11-15
Description: This test method includes a means of canceling gravity-induced deflection which could otherwise alter the shape of the wafer. The resulting parameter is described by Sori in SEMI Specification M1, Appendix Shape Decision Tree (see Annex A1).
ASTM F1390 - STANDARD TEST METHOD FOR MEASURING WARP ON SILICON WAFERS BY AUTOMATED NONCONTACT SCANNING Organization: ASTM
Date: 2002-12-10
Description: This test method covers a noncontacting, nondestructive procedure to determine the warp of clean, dry semiconductor wafers. The test method is applicable to wafers 50 mm or larger in diameter, and 100 ┬Ám (0.004 in.)
ASTM F1212 - STANDARD TEST METHOD FOR THERMAL STABILITY TESTING OF GALLIUM ARSENIDE WAFERS Organization: ASTM
Date: 1989-02-24
Description: The underlying assumption is that other wafers of GaAs, whose manufacturing history was the same as the wafer from which the test sample was taken, will respond to high temperatures in like manner.
ASTM F847 - STANDARD TEST METHODS FOR MEASURING CRYSTALLOGRAPHIC ORIENTATION OF FLATS ON SINGLE CRYSTAL SILICON WAFERS BY X-RAY TECHNIQUES Organization: ASTM
Date: 2002-12-10
Description: These test methods are applicable for wafers with flat length values in the range of those specified for silicon wafers in SEMI Specification M 1.
ASTM F1535 - STANDARD TEST METHOD FOR CARRIER RECOMBINATION LIFETIME IN SILICON WAFERS BY NONCONTACT MEASUREMENT OF PHOTOCONDUCTIVITY DECAY BY MICROWAVE REFLECTANCE Organization: ASTM
Date: 2000-06-10
Description: With suitable passivation procedures, such as thermal oxidation or immersion in a suitable solution, lifetimes as long as tens of milliseconds can be determined in polished wafers with thickness as specified in SEMI M1. NOTE 1--Carrier recombination lifetime of large bulk specimens can be determined by Method A or B of Test Methods F 28.
ASTM F1620 - STANDARD PRACTICE FOR CALIBRATING A SCANNING SURFACE INSPECTION SYSTEM USING MONODISPERSE POLYSTYRENE LATEX SPHERES DEPOSITED ON POLISHED OR EPITAXIAL WAFER SURFACES Organization: ASTM
Date: 1996-02-10
Description: NOTE 1--This practice was developed primarily for use in calibrating SSISs intended for inspecting monocrystalline wafers, in which case pre-deposited bare, monocrystalline silicon wafers must be used as calibration wafers.
ASTM F1619 - STANDARD TEST METHOD FOR MEASUREMENT OF INTERSTITIAL OXYGEN CONTENT OF SILICON WAFERS BY INFRARED ABSORPTION SPECTROSCOPY WITH P-POLARIZED RADIATION INCIDENT AT THE BREWSTER ANGLE Organization: ASTM
Date: 1995-09-15
Description: The test specimen is a single-side polished silicon wafer of the type specified in SEMI Specifications M1. The front surface of the wafer is mirror polished and the back surface may be as-cut, lapped, or etched (see 8.1.1.1).
ASTM F1241 - STANDARD TERMINOLOGY OF SILICON TECHNOLOGY Organization: ASTM
Date: 1995-09-15
Description: Scope 1.1 This terminology covers terms and definition used in relation to semiconductor grade silicon crystal and wafers. 1.2 This terminology covers terms describing attributes of silicon wafers as specified in SEMI Specifications M1 and SEMI Format M18.
ASTM F154 - STANDARD GUIDE FOR IDENTIFICATION OF STRUCTURES AND CONTAMINANTS SEEN ON SPECULAR SILICON SURFACES Organization: ASTM
Date: 2002-01-10
Description: The purpose of this guide is to list, illustrate, and provide reference for various characteristic features and contaminants that are seen on highly specular silicon wafers. Recommended practices for delineation and observation of these artifacts are referenced.
ISO 14701 - SURFACE CHEMICAL ANALYSIS - X-RAY PHOTOELECTRON SPECTROSCOPY - MEASUREMENT OF SILICON OXIDE THICKNESS - FIRST EDITION Organization: ISO
Date: 2011-08-01
Description: This International Standard specifies several methods for measuring the oxide thickness at the surfaces of (100) and (111) silicon wafers as an equivalent thickness of silicon dioxide when measured using X-ray photoelectron spectroscopy.

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