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IPC - TM-650 2.4.22.2 - SUBSTRATE CURVATURE: SILICON WAFERS WITH DEPOSITED DIELECTRICS Organization: IPC
Date: 1995-07-01
Description: This test method establishes a procedure for determining the flatness of silicon wafers coated with deposited organic films.
ASTM F1726 - STANDARD GUIDE FOR ANALYSIS OF CRYSTALLOGRAPHIC PERFECTION OF SILICON WAFERS Organization: ASTM
Date: 2002-12-10
Description: This guide covers the determination of the density of crystallographic defects in unpatterned polished and epitaxial silicon wafers. Epitaxial silicon wafers may exhibit dislocations, hillocks, shallow pits or epitaxial stacking faults, while polished wafers may exhibit several forms of crystallographic defects or surface damage.
ASTM F1152 - STANDARD TEST METHOD FOR DIMENSIONS OF NOTCHES ON SILICON WAFERS Organization: ASTM
Date: 2002-01-10
Description: This test method covers a nondestructive procedure to determine whether or not the dimensions of fiducial notches on silicon wafers fall within specified limits. The values stated in SI units are to be regarded as the standard.
ASTM F1049 - STANDARD PRACTICE FOR SHALLOW ETCH PIT DETECTION ON SILICON WAFERS Organization: ASTM
Date: 2002-12-10
Description: This practice is used to detect shallow etch pits, which may be related to the level of metallic impurities near the surface of silicon epitaxial or polished wafers. This practice is not recommended for use in defect density evaluations, but as a subjective means of estimating defect densities and distributions on the surface of a polished or epitaxial wafer.
ASTM F534 - STANDARD TEST METHOD FOR BOW OF SILICON WAFERS Organization: ASTM
Date: 2002-12-10
Description: This test method covers determination of the average amount of bow of nominally circular silicon wafers, polished or unpolished, in the free (non-clamped) condition.
DS/EN 50513 - SOLAR WAFERS - DATA SHEET AND PRODUCT INFORMATION FOR CRYSTALLINE SILICON WAFERS FOR SOLAR CELL MANUFACTURING Organization: DS
Date: 2009-05-01
Description: This document describes data sheet and product information for crystalline silicon (Si) - solar wafers and measurement methods for wafer properties.The document intends to provide the minimum information required for an optimal use of crystalline silicon wafers in solar cell manufacturing.
ASTM F657 - STANDARD TEST METHOD FOR MEASURING WARP AND TOTAL THICKNESS VARIATION ON SILICON WAFERS BY NONCONTACT SCANNING Organization: ASTM
Date: 1992-11-15
Description: Gravity-induced deflection alters the shape of the wafer and is included in the measurement. 1.5 For silicon wafers of diameter 3 in. or smaller, the values stated in inch-pound units are to be regarded as standard; the values stated in acceptable metric units in parentheses are for information only.
ASTM F533 - STANDARD TEST METHOD FOR THICKNESS AND THICKNESS VARIATION OF SILICON WAFERS Organization: ASTM
Date: 2002-12-10
Description: This test method covers measurement of the thickness of silicon wafers, polished or unpolished, and estimation of the variation in thickness across the wafer.
ASTM F1982 - STANDARD TEST METHODS FOR ANALYZING ORGANIC CONTAMINANTS ON SILICON WAFER SURFACES BY THERMAL DESORPTION GAS CHROMATOGRAPHY Organization: ASTM
Date: 1999-06-10
Description: 1.3 The range of detection limits of these test methods depend on the target organic compounds, for example, the range of detection limits will be subpicogram to nanogram level of hydrocarbons (C8 to C28)/ 1 cm2 of a silicon wafer surface. 1.4 These test methods can be used for polished silicon wafers, or silicon wafers with oxide films.
ASTM F1810 - STANDARD TEST METHOD FOR COUNTING PREFERENTIALLY ETCHED OR DECORATED SURFACE DEFECTS IN SILICON WAFERS Organization: ASTM
Date: 1997-06-10
Description: This test method describes the technique to count the density of surface defects in silicon wafers by microscopic analysis. NOTE 1 - Practical use of a defect counting method requires an assumption be made that defects are randomly distributed on the surface.
ASTM F84 - STANDARD TEST METHOD FOR MEASURING RESISTIVITY OF SILICON WAFERS WITH AN IN-LINE FOUR-POINT PROBE Organization: ASTM
Date: 2002-12-10
Description: This test method covers the measurement of the resistivity of silicon wafers with a in-line four-point probe. The resistivity of a silicon crystal is an important materials acceptance requirement.
ASTM F1239 - STANDARD TEST METHODS FOR OXYGEN PRECIPITATION CHARACTERIZATIONS OF SILICON WAFERS BY MEASUREMENT OF INTERSTITIAL OXYGEN REDUCTION Organization: ASTM
Date: 2002-01-10
Description: These test methods cover complementary procedures for testing the oxygen precipitation characteristics of silicon wafers. It is assumed that the precipitation characteristics are related to the amount of interstitial oxygen lost during specified thermal cycles.
ASTM F1727 - STANDARD PRACTICE FOR DETECTION OF OXIDATION INDUCED DEFECTS IN POLISHED SILICON WAFERS Organization: ASTM
Date: 2002-12-10
Description: This practice covers the detection of crystalline defects in the surface region of silicon wafers. The defects are induced or enhanced by oxidation cycles encountered in normal device processing.
ASTM F416 - STANDARD TEST METHOD FOR DETECTION OF OXIDATION INDUCED DEFECTS IN POLISHED SILICON WAFERS Organization: ASTM
Date: 1994-07-15
Description: Scope 1.1 This test method covers detection of crystalline defects in the surface region of silicon wafers which are induced or enhanced by oxidation cycles encountered in device processing.
ASTM F523 - STANDARD PRACTICE FOR UNAIDED VISUAL INSPECTION OF POLISHED SILICON WAFER SURFACES Organization: ASTM
Date: 2002-12-10
Description: This practice covers an inspection procedure for determining the surface quality of silicon wafers that have been polished on one side. This practice is intended as a large-volume acceptance method and does not require use of a microscope or other optical instruments.
ASTM F951 - STANDARD TEST METHOD FOR DETERMINATION OF RADIAL INTERSTITIAL OXYGEN VARIATION IN SILICON WAFERS Organization: ASTM
Date: 2002-01-10
Description: This test method is suitable for use on chemically etched, single-side polished and double-side polished silicon wafers or slices with no surface defects that could adversely change infrared radiation transmission through the test specimen (subsequently called slice), provided that appropriate test methods for oxygen content are selected.
ASTM F81 - STANDARD TEST METHOD FOR MEASURING RADIAL RESISTIVITY VARIATION ON SILICON WAFERS Organization: ASTM
Date: 2001-06-10
Description: Scope 1.1 This test method provides procedures for the determination of relative radial variation of resistivity of semiconductor wafers cut from silicon single crystals grown either by the Czochralski or floating-zone technique.
ASTM F1390 - STANDARD TEST METHOD FOR MEASURING WARP ON SILICON WAFERS BY AUTOMATED NONCONTACT SCANNING Organization: ASTM
Date: 2002-12-10
Description: This test method is not intended to measure the flatness of either exposed silicon surface. Warp is a measure of the distortion of the median surface of the wafer. This test method measures warp of a wafer corrected for all mechanical forces applied during the test.
ASTM F672 - STANDARD TEST METHOD FOR MEASURING RESISTIVITY PROFILES PERPENDICULAR TO THE SURFACE OF A SILICON WAFER USING A SPREADING RESISTANCE PROBE Organization: ASTM
Date: 2001-06-10
Description: Scope 1.1 This test method covers measurement of the resistivity profile perpendicular to the surface of a silicon wafer of known orientation and type. 1.2 This test method may be used on epitaxial films, substrates, diffused layers, or ion-implanted layers, or any combination of these.
ASTM F847 - STANDARD TEST METHODS FOR MEASURING CRYSTALLOGRAPHIC ORIENTATION OF FLATS ON SINGLE CRYSTAL SILICON WAFERS BY X-RAY TECHNIQUES Organization: ASTM
Date: 2002-12-10
Description: These test methods cover the determination of α, the angular deviation between the crystallographic orientation of the direction perpendicular to the plane of a fiducial flat on a circular silicon wafer, and the specified orientation of the flat in the plane of the wafer surface.

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