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AIR FORCE - QPL-1/1134-3 - ZENER DIODE, TYPE IN429 Organization: AIR FORCE
Date: 1960-11-21
NPFC - MIL-E-1/1134 - ZENER DIODE, TYPE 1N429 Organization: NPFC
GOST 18986.23 - ZENER DIODES. METHODS FOR MEASURING SPECTRAL NOISE DENSITY Organization: GOST
Date: 1980-12-12
GSFC-S-311-105 - SCREENING SPECIFICATION FOR A LOW VOLTAGE AVALANCHE ZENER DIODE (LVA453A) Organization: GSFC
Date: 1981-02-18
GOST 18986.20 - SEMICONDUCTOR DIODES. REFERENCE ZENER DIODES. METHOD FOR MEASURING WARM UP TIME Organization: GOST
Date: 1977-10-26
GSFC-S-311-P-715 - PROCUREMENT SPECIFICATION FOR HIGH PERFORMANCE, ZENER DIODE, TYPE LVA3100A, RHA LEVEL 'R' Organization: GSFC
Date: 1991-09-26
GSFC-S-311-379 - SCREENING PROCEDURE FOR A 7.5 VOLT LOW VOLTAGE AVALANCHE ZENER DIODE (LVA375A) Organization: GSFC
Date: 1985-03-14
GSFC-S-311-P-713 - PROCUREMENT SPECIFICATION FOR HIGH PERFORMANCE, LOW CURRENT ZENER DIODE, TYPE LVA450, RHA LEVEL 'R' Organization: GSFC
Date: 1991-09-26
GSFC-S-311-636 - PROCUREMENT SPECIFICATION FOR HIGH VOLTAGE ZENER DIODE, UZ130HR (UNITRODE) (XTE ONLY) Organization: GSFC
Date: 1990-08-09
GSFC-S-311-P-714 - PROCUREMENT SPECIFICATION FOR HIGH PERFORMANCE, LOW CURRENT ZENER DIODE, TYPE LVA462, RHA LEVEL 'R' Organization: GSFC
Date: 1991-09-26
IECQ - QC 750105/ IN 0001 - DETAIL SPECIFICATION FOR ELECTRONIC COMPONENT: 500MW SILICON ZENER DIODES IN DO-35 GLASS PACKAGE TYPE: BZX55 C2V7 TO C47 ASSESSMENT LEVEL: CATEGORY I Organization: IECQ
Date: 1990-01-01
JEDEC JESD 211 - ZENER AND VOLTAGE REGULATOR DIODE RATING VERIFICATION AND CHARACTERIZATION TESTING Organization: JEDEC
Date: 2009-12-01
Description: This standard is applicable to diodes that are used as voltage regulators and voltage references. It describes terms and definitions and explains methods for verifying device ratings and measuring device characteristics.
NPFC - MIL-PRF-28776/7 - RELAYS, HYBRID, ESTABLISHED RELIABILITY, DPDT, LOW LEVEL TO 1.0 AMPERE (SENSITIVE COIL OPERATE POWER AT 25 DEG. C), TERMINAL MOSFET DRIVER WITH ZENER DIODE GATE PROTECTION (ELECTROMECHANICAL OUTPUT) DIODE COIL SUPPRESSION AND TERMINALS WITH 0.100 GRID LEAD Organization: NPFC
NPFC - MIL-PRF-28776/6 - RELAYS, HYBRID, ESTABLISHED RELIABILITY, DPDT, LOW LEVEL TO 1.0 AMPERE INTERNAL MOSFET DRIVE WITH ZENER DIODE GATE PROTECTION (ELECTROMECHANICAL OUTPUT) DIODE COIL SUPPRESSION AND TERMINALS WITH 0.100 GRID LEAD SPACING Organization: NPFC
NPFC - MIL-R-28776/6 - RELAYS, HYBRID, ESTABLISHED RELIABILITY, DPDT, LOW LEVEL TO 1.0 AMPERE INTERNAL MOSFET DRIVE WITH ZENER DIODE GATE PROTECTION, (ELECTROMECHANICAL OUTPUT) DIODE COIL SUPPRESSION AND TERMINALS WITH 0.100 GRID LEAD SPACING Organization: NPFC
NPFC - MIL-R-28776/7 - RELAYS, HYBRID, ESTABLISHED RELIABILITY, DPDT, LOW LEVEL TO 1.0 AMPERE (SENSITIVE COIL OPERATE POWER AT 25 DEGREES C), INTERNAL MOSFET DRIVER WITH ZENER DIODE GATE PROTECTION (ELECTROMECHANICAL OUTPUT), DIODE COIL SUPPRESSION AND TERMINALS WITH 0.100 GRID LEAD Organization: NPFC
NPFC - MIL-S-19500/533 - SEMICONDUCTOR DEVICE, DIODE, SILICON, ZENER, VOLTAGE REGULATOR, SOLID GLASS NONCAVITY CONSTRUCTION, TYPES 1N6309 THROUGH 1N6355, IN6309US THROUGH 1N6335US, PLUS C AND D TOLERANCE SUFFIX; JANTX, JANTXV, AND JANS Organization: NPFC
IEEE PC62.42.3 DRAFT - DRAFT GUIDE FOR THE APPLICATION OF SURGE-PROTECTIVE COMPONENTS IN SURGE PROTECTIVE DEVICES AND EQUIPMENT PORTS - PART 3 SILICON PN-JUNCTION CLAMPING DIODES Organization: IEEE
Date: 2016-12-01
Description: This part, Part 3 of the C62.42 series, describes Silicon PN Junction Clamping Diode SPCs and covers: • Technology variants o forward biased semiconductor diodes o Zener breakdown semiconductor diodes o avalanche breakdown semiconductor diodes o punch-through semiconductor bipolar junction transistor diodes o fold-back semiconductor bidirectional transistor diodes • Component construction • Characteristics • Ratings • Application examples  
WILEY - INTRODUCTORY CIRCUITS - INTRODUCTORY CIRCUITS Organization: WILEY
Date: 2008-01-01
Description: As well as covering classical linear theory involving resistance, capacitance and inductance it treats practical nonlinear circuits containing components such as operational amplifiers, Zener diodes and exponential diodes. The books straightforward approach highlights the similarity between the equations describing direct current (DC), alternating current (AC) and small-signal nonlinear behaviour, thus making the analysis of these circuits easier to comprehend.
SAE/TP - 2008-01-2876 - INDUCTIVE LOAD SWITCHING SUPPRESSION METHODS: INCREASING MILITARY AND AEROSPACE APPLICATIONS RELIABILITY Organization: SAE/TP
Date: 2008-11-11
Description: In this paper the impact of several methods of inductive suppression are explored. Diode, zener diode, transient voltage suppressors all provide methods to control polarity and voltage levels generated by collapsing magnetic fields in deenergized inductive devices.

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