UNLIMITED FREE ACCESS TO THE WORLD'S BEST IDEAS

close
Already an Engineering360 user? Log in.

This is embarrasing...

An error occurred while processing the form. Please try again in a few minutes.

Customize Your Engineering360 Experience

close
Privacy Policy

This is embarrasing...

An error occurred while processing the form. Please try again in a few minutes.

DOD - SMD 5962-96512

MICROCIRCUIT, DIGITAL, ADVANCED CMOS, RADIATION HARDENED QUAD 2-INPUT NAND GATE, MONOLITHIC SILICON

active, Most Current
Buy Now
Organization: DOD
Publication Date: 25 October 2017
Status: active
Page Count: 25
scope:

This drawing documents two product assurance class levels consisting of high reliability device class Q and space application device class V. A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN.

intended Use:

Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes

Document History

SMD 5962-96512
October 25, 2017
MICROCIRCUIT, DIGITAL, ADVANCED CMOS, RADIATION HARDENED QUAD 2-INPUT NAND GATE, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability device class Q and space application device class V. A choice of case outlines and lead finishes are available...
June 11, 2014
MICROCIRCUIT, DIGITAL, ADVANCED CMOS, RADIATION HARDENED QUAD 2-INPUT NAND GATE, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability device class Q and space application device class V. A choice of case outlines and lead finishes are available...
October 23, 2013
MICROCIRCUIT, DIGITAL, ADVANCED CMOS, RADIATION HARDENED QUAD 2-INPUT NAND GATE, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability device class Q and space application device class V. A choice of case outlines and lead finishes are available...
August 22, 2007
MICROCIRCUIT, DIGITAL, ADVANCED CMOS, RADIATION HARDENED QUAD 2-INPUT NAND GATE, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes...
June 4, 2001
MICROCIRCUIT, DIGITAL, RADIATION HARDENED, ADVANCED CMOS, QUAD 2-INPUT NAND GATE, MONOLITHIC SILICON
A description is not available for this item.
March 31, 1998
MICROCIRCUIT, DIGITAL, RADIATION HARDENED, ADVANCED CMOS, QUAD 2-INPUT NAND GATE, MONOLITHIC SILICON
This appendix establishes minimum requirements for microcircuit die to be supplied under the Qualified Manufacturers List (QML) Program. QML microcircuit die meeting the requirements of MIL-PFR-38535...
November 25, 1996
MICROCIRCUIT, DIGITAL, RADIATION HARDENED, ADVANCED CMOS, QUAD 2-INPUT NAND GATE, MONOLITHIC SILICON
A description is not available for this item.
November 24, 1995
MICROCIRCUIT, DIGITAL, RADIATION HARDENED, ADVANCED CMOS, QUAD 2-INPUT NAND GATE, MONOLITHIC SILICON
This drawing forms a part of a one part - one part number documentation system (see 6.6 herein). Two product assurance classes consisting of military high reliability (device classes Q and M) and...

References

Advertisement