JEDEC JESD 57
Test Procedures for the Measurement of Single-Event Effects in Semiconductor Devices from Heavy Ion Irradiation
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| Organization: | JEDEC |
| Publication Date: | 1 December 1996 |
| Status: | active |
| Page Count: | 49 |
scope:
This test method defines requirements and procedures for ground simulation and single event effects (SEE) and implementation of the method in testing integrated circuits. This standard is valid when using a cyclotron or Van de Graaff accelerator. Microcircuits under test must be delidded. The ions used at the facilities have an atomic number Z > 2. It does not apply to SEE testing that uses protons, neutrons, or other lighter particles. This standard is designed to eliminate any misunderstanding between users of the method and test facilities, to minimize delays, and to promote standardization of testing and test data.
Document History
JEDEC JESD 57
December 1, 1996
Test Procedures for the Measurement of Single-Event Effects in Semiconductor Devices from Heavy Ion Irradiation
This test method defines requirements and procedures for ground simulation and single event effects (SEE) and implementation of the method in testing integrated circuits. This standard is valid when...
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