DLA - DSCC-VID-V62/03639 REV B
MICROCIRCUIT, DIGITAL, 3.3 V CMOS FIRST-IN, FIRST-OUT MEMORIES, MONOLITHIC SILICON
active, Most Current
| Organization: | DLA |
| Publication Date: | 19 March 2019 |
| Status: | active |
| Page Count: | 27 |
scope:
This drawing documents the general requirements of a 3.3 V CMOS first-in, first-out memories, with an operating temperature range of -55°C to +125°C.
Document History
DSCC-VID-V62/03639 REV B
March 19, 2019
MICROCIRCUIT, DIGITAL, 3.3 V CMOS FIRST-IN, FIRST-OUT MEMORIES, MONOLITHIC SILICON
This drawing documents the general requirements of a 3.3 V CMOS first-in, first-out memories, with an operating temperature range of -55°C to +125°C.
November 9, 2009
MICROCIRCUIT, DIGITAL, 3.3 V CMOS FIRST-IN, FIRST-OUT MEMORIES, MONOLITHIC SILICON
This drawing documents the general requirements of a 3.3 V CMOS first-in, first-out memories, with an operating temperature range of -55°C to +125°C.
November 6, 2003
MICROCIRCUIT, DIGITAL, 3.3 V CMOS FIRST-IN, FIRST-OUT MEMORIES, MONOLITHIC SILICON
A description is not available for this item.