NPFC - MIL-PRF-19500/631
TRANSISTOR, FIELD EFFECT, N-CHANNEL SILICON, RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS), TYPES 2N7395, 2N7396, 2N7397, AND 2N7398, QUALITY LEVELS JANSD AND JANSR
active, Most Current
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| Organization: | NPFC |
| Publication Date: | 26 October 2019 |
| Status: | active |
| Page Count: | 21 |
scope:
Scope.
This specification covers the performance requirements for a N-channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event characterization only), power transistors. One level of product assurance (JANS) is provided for each device type as specified in MIL-PRF-19500.
intended Use:
The notes specified in MIL-PRF-19500 are applicable to this specification.
Document History
MIL-PRF-19500/631
October 26, 2019
TRANSISTOR, FIELD EFFECT, N-CHANNEL SILICON, RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS), TYPES 2N7395, 2N7396, 2N7397, AND 2N7398, QUALITY LEVELS JANSD AND JANSR
Scope.
This specification covers the performance requirements for a N-channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event characterization only), power transistors....
May 24, 2016
Semiconductor Device, Filed Effect Radiation Hardened Total Dose and Single Event Effects) Transistors, N-Channel Silicon, Types 2N7395, 2N7396, 2N7397, and 2N7398, JANSD and JANSR
A description is not available for this item.
July 15, 2011
Semiconductor Device, Filed Effect Radiation Hardened Total Dose and Single Event Effects) Transistors, N-Channel Silicon, Types 2N7395, 2N7396, 2N7397, and 2N7398, JANSD and JANSR
This specification covers the performance requirements for a N-channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event characterization), power transistors. One level of...
March 9, 2004
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTORS, N-CHANNEL SILICON, TYPES 2N7395, 2N7396, 2N7397, AND 2N7398, JANSD AND JANSR
This specification covers the performance requirements for a N-channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event characterization), power transistors. One level of...
June 16, 2003
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTORS, N-CHANNEL SILICON, TYPES 2N7395, 2N7396, 2N7397, AND 2N7398, JANSD AND JANSR
A description is not available for this item.
August 20, 1998
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTORS, N-CHANNEL SILICON, TYPES 2N7395, 2N7396, 2N7397, AND 2N7398, JANSD AND JANSR
This specification covers the performance requirements for a N-Channel, enhancement-mode, MOSFET, radiation hardened (Total Dose and Single Event characterization - see figure 4), power transistors....
November 29, 1996
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTORS, N-CHANNEL SILICON, TYPES 2N7395, 2N7396, 2N7397, AND 2N7398 JANTXD, -R, JANTXVD, -R, AND JANSD, -R
This specification covers the performance requirements for a N-Channel, enhancement-mode, MOSFET, radiation hardened (Total Dose and Single Event characterization- see figure 4), power transistor...