NPFC - MIL-PRF-19500/617
SEMICONDUCTOR DEVICES, UNITIZED, DIODE, SILICON, POWER RECTIFIER, ULTRAFAST, DUAL (COMMON CATHODE OR COMMON ANODE, CENTER TAP), TYPES 1N6672 THROUGH 1N6674, STANDARD AND REVERSE POLARITY, QUALITY LEVELS JAN, JANTX, JANTXV, AND JANS
active, Most Current
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| Organization: | NPFC |
| Publication Date: | 28 May 2020 |
| Status: | active |
| Page Count: | 12 |
scope:
Scope.
This specification covers the performance requirements for silicon, high voltage, ultrafast, power rectifier diodes in a dual die, center-tap configuration. Four levels of product assurance (JAN, JANTX, JANTXV, and JANS) are provided for each device type as specified in MIL-PRF-19500.
intended Use:
Semiconductors conforming to this specification are intended for original equipment design applications and logistic support of existing equipment.
Document History
MIL-PRF-19500/617
May 28, 2020
SEMICONDUCTOR DEVICES, UNITIZED, DIODE, SILICON, POWER RECTIFIER, ULTRAFAST, DUAL (COMMON CATHODE OR COMMON ANODE, CENTER TAP), TYPES 1N6672 THROUGH 1N6674, STANDARD AND REVERSE POLARITY, QUALITY LEVELS JAN, JANTX, JANTXV, AND JANS
Scope.
This specification covers the performance requirements for silicon, high voltage, ultrafast, power rectifier diodes in a dual die, center-tap configuration. Four levels of product assurance...
October 2, 2019
Semiconductor Devices, Unitized, Diode, Silicon, Power Rectifier, Dual, Common Cathode or Anode Center Tap, Ultrafast, Types 1N6672 through 1N6674 and 1N6672R through 1N6674R, JAN, JANTX, JANTXV, and JANS
A description is not available for this item.
December 19, 2014
SEMICONDUCTOR DEVICES, UNITIZED, DIODE, SILICON, POWER RECTIFIER, DUAL, COMMON CATHODE OR ANODE CENTER TAP, ULTRAFAST, TYPES 1N6672 THROUGH 1N6674 AND 1N6672R THROUGH 1N6674R, JAN, JANTX, JANTXV, AND JANS
This specification covers the performance requirements for a silicon, dual high voltage, ultra-fast power rectifier diodes. Four levels of product assurance (JAN, JANTX, JANTXV, and JANS) are...
March 13, 2014
Semiconductor Device, Diode, Silicon, Power Rectifier, Dual, Common Cathode or Anode Center Tap, Ultrafast, Types 1N6672 through 1N6674 and 1N6672R through 1N6674R, JAN, JANTX, JANTXV, and JANS
A description is not available for this item.
April 17, 2009
SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, DUAL, COMMON CATHODE OR ANODE CENTER TAP, ULTRAFAST, TYPES 1N6672 THROUGH 1N6674 AND 1N6672R THROUGH 1N6674R, JAN, JANTX, JANTXV, AND JANS
This specification covers the performance requirements for a silicon, dual high voltage, ultra-fast power rectifier diodes. Four levels of product assurance are provided for each device type as...
August 3, 2007
SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, DUAL, COMMON CATHODE OR ANODE CENTER TAP, ULTRAFAST, TYPES 1N6672 THROUGH 1N6674 AND 1N6672R THROUGH 1N6674R, JAN, JANTX, JANTXV, AND JANS
This specification covers the performance requirements for a silicon, dual high voltage, ultra-fast power rectifier diodes. Four levels of product assurance are provided for each device type as...
April 3, 2006
SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, DUAL, COMMON CATHODE OR ANODE CENTER TAP, ULTRAFAST, TYPES 1N6672 THROUGH 1N6674 AND 1N6672R THROUGH 1N6674R, JAN, JANTX, JANTXV, AND JANS
This specification covers the performance requirements for a silicon, dual high voltage, ultra-fast power rectifier diodes. Four levels of product assurance are provided for each device type as...
October 15, 1997
SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, DUAL, COMMON CATHODE OR ANODE CENTER TAP, ULTRAFAST, TYPES 1N6672 THROUGH 1N6674 AND 1N6672R THROUGH 1N6674R, JAN, JANTX, JANTXV, AND JANS
This specification covers the performance requirements for a silicon, dual high voltage, ultrafast power rectifier diodes. Four levels of product assurance are provided for each device type as...
March 8, 1994
SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, DUAL, COMMON CATHODE OR ANODE CENTER TAP, ULTRAFAST, TYPES 1N6672 THROUGH 1N6674 AND 1N6672R THROUGH 1N6674R, JANTX, JANTXV, AND JANS
This specification covers the detail requirements for a silicon, dual high voltage, ultrafast power rectifier diodes. Three levels of product assurance are provided for each device type as specified...