DSF/PREN IEC 62819
Semiconductor devices – Reliability test method for silicon carbide discrete metal-oxide semiconductor field effect transistors – Part 1: Test method for bias temperature instability
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| Organization: | DS |
| Status: | active |
| Page Count: | 50 |
scope:
This part of IEC 63275-1 gives a test method to evaluate gate threshold voltage shift of silicon carbide (SiC) power metal-oxide-semicond
Document History
June 14, 2023
Live working – Eye, face and head protectors against the effects of electric arc – Performance requirements and test methods
This part of IEC 63275-1 gives a test method to evaluate gate threshold voltage shift of silicon carbide (SiC) power metal-oxide-semiconductor field-effect transistors (MOSFETs) using room...
DSF/PREN IEC 62819
Semiconductor devices – Reliability test method for silicon carbide discrete metal-oxide semiconductor field effect transistors – Part 1: Test method for bias temperature instability
This part of IEC 63275-1 gives a test method to evaluate gate threshold voltage shift of silicon carbide (SiC) power metal-oxide-semiconductor field-effect transistors (MOSFETs) using room...