DLA - MIL-PRF-19500/647H (1)
SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, ULTRAFAST, TYPES 1N6778 AND 1N6779, JAN, JANTX, JANTXV, AND JANS
active, Most Current
| Organization: | DLA |
| Publication Date: | 14 October 2022 |
| Status: | active |
| Page Count: | 12 |
scope:
Scope.
This specification covers the performance requirements for silicon, ultrafast, power rectifier diodes. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500.
intended Use:
Semiconductors conforming to this specification are intended for original equipment design applications and logistic support of existing equipment.
Document History
MIL-PRF-19500/647H (1)
October 14, 2022
SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, ULTRAFAST, TYPES 1N6778 AND 1N6779, JAN, JANTX, JANTXV, AND JANS
Scope.
This specification covers the performance requirements for silicon, ultrafast, power rectifier diodes. Four levels of product assurance are provided for each device type as specified in...
December 28, 2021
SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, ULTRAFAST, TYPES 1N6778 AND 1N6779, JAN, JANTX, JANTXV, AND JANS
Scope.
This specification covers the performance requirements for silicon, ultrafast, power rectifier diodes. Four levels of product assurance are provided for each device type as specified in...
March 19, 2018
SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, ULTRAFAST, TYPES 1N6778 AND 1N6779, JAN, JANTX, JANTXV, AND JANS
This specification covers the performance requirements for silicon, ultrafast, power rectifier diodes. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500.
June 21, 2013
SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, ULTRAFAST, TYPES 1N6778 AND 1N6779, JAN, JANTX, JANTXV, AND JANS
This specification covers the performance requirements for silicon, ultrafast, power rectifier diodes. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500.
November 5, 2007
SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, ULTRAFAST, TYPES 1N6778 AND 1N6779, JAN, JANTX, JANTXV, AND JANS
This specification covers the performance requirements for silicon, ultrafast, power rectifier diodes in a center-tap configuration. Four levels of product assurance are provided for oath device type...
August 4, 2006
SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, DUAL, ULTRAFAST, TYPES 1N6778 AND 1N6779, JAN, JANTX, JANTXV, AND JANS
This specification covers the performance requirements for silicon, ultrafast, power rectifier diodes in a centertap configuration. Four levels of product assurance are provided for oath device type...
October 24, 2005
SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, DUAL, ULTRAFAST, TYPES 1N6778 AND 1N6779 JAN, JANTX, JANTXV, AND JANS
This specification covers the performance requirements for silicon, ultrafast, power rectifier diodes in a center-tap configuration. Four levels of product assurance are provided for oath device type...
June 16, 2003
SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, ULTRAFAST, TYPES 1N6778 AND 1N6779, JAN, JANTX, JANTXV AND JANS
A description is not available for this item.
August 16, 1998
SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, ULTRAFAST, TYPES 1N6778 AND 1N6779 JAN, JANTX, JANTXV, and JANS
This specification covers the performance requirements for silicon, ultrafast, power rectifier diodes. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500.