DLA - MIL-PRF-19500/644C (1)
SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, DUAL, COMMON CATHODE OR ANODE CENTER TAP, ULTRAFAST, THROUGH HOLE MOUNT PACKAGE, TYPES 1N6768 THROUGH 1N6771, QUALITY LEVELS JAN, JANTX, JANTXV, AND JANS
active, Most Current
| Organization: | DLA |
| Publication Date: | 22 December 2022 |
| Status: | active |
| Page Count: | 11 |
scope:
Scope.
This specification covers the performance requirements for silicon, dual ultrafast, power rectifier diodes in a common center-tap configuration. Four levels of product assurance (JAN, JANTX, JANTXV, and JANS) are provided for each device type as specified in MIL-PRF-19500.
intended Use:
Devices conforming to this specification are intended for original equipment design applications and logistic support of existing equipment.
Document History
MIL-PRF-19500/644C (1)
December 22, 2022
SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, DUAL, COMMON CATHODE OR ANODE CENTER TAP, ULTRAFAST, THROUGH HOLE MOUNT PACKAGE, TYPES 1N6768 THROUGH 1N6771, QUALITY LEVELS JAN, JANTX, JANTXV, AND JANS
Scope.
This specification covers the performance requirements for silicon, dual ultrafast, power rectifier diodes in a common center-tap configuration. Four levels of product assurance (JAN, JANTX,...
January 4, 2022
SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, DUAL, COMMON CATHODE OR ANODE CENTER TAP, ULTRAFAST, THROUGH HOLE MOUNT PACKAGE, TYPES 1N6768 THROUGH 1N6771, QUALITY LEVELS JAN, JANTX, JANTXV, AND JANS
Scope.
This specification covers the performance requirements for silicon, dual ultrafast, power rectifier diodes in a common center-tap configuration. Four levels of product assurance (JAN, JANTX,...
May 24, 2019
SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, DUAL, COMMON CATHODE OR ANODE CENTER TAP, ULTRAFAST, THROUGH HOLE MOUNT PACKAGE, TYPES 1N6768 THROUGH 1N6771, QUALITY LEVELS JAN, JANTX, JANTXV, AND JANS
Scope.
This specification covers the performance requirements for silicon, dual ultrafast, power rectifier diodes in a common center-tap configuration. Four levels of product assurance (JAN, JANTX,...
February 26, 2016
SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, DUAL, COMMON CATHODE OR ANODE CENTER TAP, ULTRAFAST, THROUGH HOLE MOUNT PACKAGE, TYPES 1N6768 THROUGH 1N6771, QUALITY LEVELS JAN, JANTX, JANTXV, AND JANS
This specification covers the performance requirements for silicon, dual ultrafast, power rectifier diodes in a common center-tap configuration. Four levels of product assurance (JAN, JANTX, JANTXV,...
July 15, 2011
Semiconductor Device, Diode, Silicon, Power Rectifier, Dual, Common Cathode or Anode Center Tap, Ultrafast, Types 1N6768 Through 1N6771 and 1N6768R Through 1N6771R JAN, JANTX, JANTXV, and JANS
A description is not available for this item.
June 27, 2003
SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, DUAL, COMMON CATHODE OR ANODE CENTER TAP, ULTRAFAST, TYPES 1N6768 THROUGH 1N6771 AND 1N6768R THROUGH 1N6771R, JAN, JANTX, JANTXV, AND JANS
A description is not available for this item.
August 16, 1998
SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, DUAL, COMMON CATHODE OR ANODE CENTER TAP, ULTRAFAST, TYPES 1N6768 THROUGH 1N6771 AND 1N6768R THROUGH 1N6771R JAN, JANTX, JANTXV, AND JANS
This specification covers the performance requirements for silicon, dual ultrafast, power rectifier diodes in a center-tap configuration. Four levels of product assurance are provided for each device...