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DLA - MIL-PRF-19500/764B (1)

SEMICONDUCTOR DEVICE, DIODE, SILICON, SCHOTTKY, DUAL, COMMON CATHODE, ENCAPSULATED (THROUGH-HOLE), TYPE 1N7071, QUALITY LEVELS JAN, JANTX, JANTXV, AND JANS

active, Most Current
Organization: DLA
Publication Date: 5 May 2023
Status: active
Page Count: 15
scope:

Scope.

This specification covers the performance requirements for silicon, Schottky, power rectifier diodes in a dual diode common cathode configuration for use in high frequency switching power supplies and resonant power converters. Four levels of product assurance (JAN, JANTX, JANTXV, and JANS) are provided for each device type.

intended Use:

Semiconductors conforming to this specification are intended for original equipment design applications and logistic support of existing equipment.

Document History

MIL-PRF-19500/764B (1)
May 5, 2023
SEMICONDUCTOR DEVICE, DIODE, SILICON, SCHOTTKY, DUAL, COMMON CATHODE, ENCAPSULATED (THROUGH-HOLE), TYPE 1N7071, QUALITY LEVELS JAN, JANTX, JANTXV, AND JANS
Scope. This specification covers the performance requirements for silicon, Schottky, power rectifier diodes in a dual diode common cathode configuration for use in high frequency switching power...
December 11, 2020
SEMICONDUCTOR DEVICE, DIODE, SILICON, SCHOTTKY, DUAL, COMMON CATHODE, ENCAPSULATED (THROUGH-HOLE), TYPE 1N7071, QUALITY LEVELS JAN, JANTX, JANTXV, AND JANS
Scope. This specification covers the performance requirements for silicon, Schottky, power rectifier diodes in a dual diode common cathode configuration for use in high frequency switching power...
November 24, 2015
SEMICONDUCTOR DEVICE, DIODE, SILICON, SCHOTTKY, DUAL, COMMON CATHODE, ENCAPSULATED (THROUGH-HOLE), TYPE 1N7071CCT8, JAN, JANTX, JANTXV, AND JANS
This specification covers the performance requirements for silicon, Schottky center tap power rectifier diodes for use in high frequency switching power supplies and resonant power converters. Four...
March 18, 2015
Semiconductor Device, Diode, Silicon, Schottky, Dual, Common Cathode, Type 1N7071CCT8, JAN, JANTX, JANTXV, and JANS
A description is not available for this item.
January 22, 2009
SEMICONDUCTOR DEVICE, DIODE, SILICON, SCHOTTKY, DUAL, COMMON CATHODE, TYPE 1N7071CCT8, JAN, JANTX, JANTXV, AND JANS
This specification covers the performance requirements for silicon, Schottky center tap power rectifier diodes for use in high frequency switching power supplies and resonant power converters. Four...

References

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