NPFC - MIL-S-19500/579
SEMICONDUCTOR DEVICE, TRANSISTOR, FIELD EFFECT DMOS, QUAD N-CHANNEL TYPES 2N7116, 2N7117, AND 2N7118, JANTX, JANTXV, AND JANS
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| Organization: | NPFC |
| Publication Date: | 14 November 1989 |
| Status: | active |
| Page Count: | 16 |
scope:
This specification covers the detail requirements for an N-channel, lateral DMOS field effect transistor quad for use in high speed switching and multiplexing. Three levels of product assurance are provided for each device type as specified in MIL-S-19500.
See figure 1, side braze dual-in-line, 16 lead.
Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this document should be addressed to: Commander, Rome Air Development Center ATTN: RBE-2, Griffiss AFB, NY 13441, by using the self-addressed Standardization Document Improvement Proposal (DD Form 1426) appearing at the end of this document or by letter.
Document History
June 25, 1999
SEMICONDUCTOR DEVICE, TRANSISTOR, FIELD EFFECT DMOS, QUAD N-CHANNEL TYPES 2N7116, 2N7117, AND 2N7118, JANTX, JANTXV, AND JANS
A description is not available for this item.
August 1, 1991
SEMICONDUCTOR DEVICE, TRANSISTOR, FIELD EFFECT DMOS, QUAD N-CHANNEL TYPES 2N7116, 2N7117, AND 2N7118, JANTX, JANTXV, AND JANS
A description is not available for this item.
MIL-S-19500/579
November 14, 1989
SEMICONDUCTOR DEVICE, TRANSISTOR, FIELD EFFECT DMOS, QUAD N-CHANNEL TYPES 2N7116, 2N7117, AND 2N7118, JANTX, JANTXV, AND JANS
This specification covers the detail requirements for an N-channel, lateral DMOS field effect transistor quad for use in high speed switching and multiplexing. Three levels of product assurance are...