IPC - TM-650 2.4.22.2
Substrate Curvature: Silicon Wafers with Deposited Dielectrics
active, Most Current
| Organization: | IPC |
| Publication Date: | 1 July 1995 |
| Status: | active |
| Page Count: | 2 |
scope:
This test method establishes a procedure for determining the flatness of silicon wafers coated with deposited organic films.
Document History
TM-650 2.4.22.2
July 1, 1995
Substrate Curvature: Silicon Wafers with Deposited Dielectrics
This test method establishes a procedure for determining the flatness of silicon wafers coated with deposited organic films.