scope:

This specification covers the detail requirements for monolithic silicon, high speed, CMOS logic microcircuits. Two product assurance classes and a choice of case outlines and lead finishes are provided and are reflected in the complete part number.

The part number shall be in accordance with MIL-M-38510, and as specified herein.

The device types shall be as follows:

Device type Circuit 01 BCD-to-decimal decoder 02 Single 3- to 8-line decoder 03 Dual 2- to 4- line decoder 04 4- to 16- line decoder/demultiplexer 52 Single 3- to 8-line decoder (TTL compatible) 53 Dual 2- to 4- line decoder (TTL compatible)

The device class shall be the product assurance level as defined in MIL-M-38510.

The case outlines shall be designated as follows:

Outline letter Case outline (see MIL-M-35810, appendix C) E D-2 (16-lead, ¼" × ⅞") dual-in-line package F F-5 (16-lead, ¼" × ⅜") flat package K F-6 (24-lead, ⅜" × ⅝") flat package L D-9 (24-lead, ¼" × 1 ¼") dual-in-line package 2 C-2 (20-terminal, .350" × .350") square chip carrier package 3 C-4 (28-terminal, .450" × .450") square chip carrier package

Supply voltage (V_CC) - - - - - - - - - - - - - - −0.5 V dc to +7.0 V dc DC input voltage (V_IN) - - - - - - - - - - - - - −0.5 V dc to V_CC +0.5 V dc DC output voltage (V_OUT) - - - - - - - - - - - - −0.5 V dc to V_CC +0.5 V dc Clamp diode current (I_IK, I_OK) - - - - - - - - - ±20 mA DC output current per pin (I_OUT) - - - - - - - - ±25 mA DC V_CC or GND current per pin (I_OC)- - - - - - - ±50 mA Storage temperature range (T_STG) - - - - - - - - −65°C to +150°C Maximum power dissipation (P_D) - - - - - - - - - 300 mW Lead temperature (soldering, 10 seconds) - - - - +300°C Thermal resistance, junction-to-case (θ_JC): Cases E, F, K, and L - - - - - - - - - - - - - (See MIL-M-38510, appendix C.) Case 2 - - - - - - - - - - - - - - - - - - - - 60°C/W Case 3 - - - - - - - - - - - - - - - - - - - - (TBD) Junction temperature (T_J)- - - - - - - - - - - - +175°C

Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this document should be addressed to: Rome Air Development Center (RBE-2), Griffiss AFB, NY 13441, by using the self-addressed Standardization Document Improvement Proposal (DD Form 1426) appearing at the end of this document or by letter.

Device types 01, 02, 03, and 04: Supply voltage (V_CC) - - - - - - - - - - - 2 V dc to 6 V dc Input low (V_IL) maximum voltage- - - - - - 0.3 V at V_CC = 2 V 0.9 V at V_CC = 4.5 V 1.2 V at V_CC = 6 V Input high (V_IH) minimum voltage - - - - - 1.5 V at V_CC = 2 V 3.15 V at V_CC = 4.5 V 4.2 V at V_CC = 6 V Input rise and fall times (t_r, t_f) maximum: V_CC = 2 V- - - - - - - - - - - - - - - - 1,000 ns V_CC = 4.5 V- - - - - - - - - - - - - - - 500 ns V_CC = 6 V- - - - - - - - - - - - - - - - 400 ns Device types 52 and 53: Supply voltage (V_CC) - - - - - - - - - - - 4.5 V dc to 5.5 V dc Input low (V_IL) maximum voltage- - - - - - 0.8 V at V_CC = 4.5 through 5.5 V Input high (V_IH) minimum voltage - - - - - 2.0 V at V_CC = 4.5 through 5.5 V Input rise and fall times (t_r, t_f) maximum: V_CC = 4.5 V and 5.5 V- - - - - - - - - - 500 ns All devices: Output voltage - - - - - - - - - - - - - - - 0 V dc to V_CC. Case operating temperature (T_C)- - - - - - −55°C to +125°C

intended Use:

Microcircuits conforming to this specification are intended for original equipment design application and logistic support of existing equipment.