NPFC - MIL-PRF-19500/241
SEMICONDUCTOR DEVICE, DIODE, SILICON, LOW LEAKAGE, CONTROLLED FORWARD VOLTAGE TYPES 1N3595-1, 1N3595US, AND 1N3595UR-1, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
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| Organization: | NPFC |
| Publication Date: | 19 April 2007 |
| Status: | inactive |
| Page Count: | 17 |
scope:
This specification covers the performance requirements for silicon, controlled voltage diodes. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500 (see 6.3.2). Two levels of product assurance are provided for die.
intended Use:
Semiconductors conforming to this specification are intended for original equipment design applications and logistic support of existing equipment.
Document History
October 26, 2022
SEMICONDUCTOR DEVICE, DIODE, SILICON, LOW LEAKAGE, CONTROLLED FORWARD VOLTAGE, TYPES 1N3595, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
Scope.
This specification covers the performance requirements for silicon, controlled forward voltage diodes. Four levels of product assurance (JAN, JANTX, JANTXV, and JANS) are provided for each...
September 8, 2021
SEMICONDUCTOR DEVICE, DIODE, SILICON, LOW LEAKAGE, CONTROLLED FORWARD VOLTAGE, TYPES 1N3595, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
Scope.
This specification covers the performance requirements for silicon, controlled forward voltage diodes. Four levels of product assurance (JAN, JANTX, JANTXV, and JANS) are provided for each...
March 20, 2020
SEMICONDUCTOR DEVICE, DIODE, SILICON, LOW LEAKAGE, CONTROLLED FORWARD VOLTAGE, TYPES 1N3595, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
Scope.
This specification covers the performance requirements for silicon, controlled forward voltage diodes. Four levels of product assurance (JAN, JANTX, JANTXV, and JANS) are provided for each...
June 4, 2018
DIODE, SILICON, LOW LEAKAGE, CONTROLLED FORWARD VOLTAGE, TYPES 1N3595, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
This specification covers the performance requirements for silicon, controlled forward voltage diodes. Four levels of product assurance (JAN, JANTX, JANTXV, and JANS) are provided for each device...
January 30, 2015
DIODE, SILICON, LOW LEAKAGE, CONTROLLED FORWARD VOLTAGE, TYPES 1N3595-1, 1N3595UB, 1N3595UB2, 1N3595US, 1N3595UR-1, 1N3595A-1, 1N3595AUS, AND 1N3595AUR-1, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
This specification covers the performance requirements for silicon, controlled forward voltage diodes. Four levels of product assurance are provided for each device type as specified in...
August 30, 2014
SEMICONDUCTOR DEVICE, DIODE, SILICON, LOW LEAKAGE, CONTROLLED FORWARD VOLTAGE, TYPES 1N3595-1, 1N3595UB, 1N3595UBCA, 1N3595UBD, 1N3595UBCC, 1N3595UB2, 1N3595UB2R, 1N3595US, 1N3595UR-1, 1N3595A-1, 1N3595AUS, AND 1N3595AUR-1, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
This specification covers the performance requirements for silicon, controlled forward voltage diodes. Four levels of product assurance are provided for each device type as specified in...
November 14, 2013
SEMICONDUCTOR DEVICE, DIODE, SILICON, LOW LEAKAGE, CONTROLLED FORWARD VOLTAGE, TYPES 1N3595-1, 1N3595UB, 1N3595UBCA, 1N3595UBD, 1N3595UBCC, 1N3595UB2, 1N3595UB2R, 1N3595US, 1N3595UR-1, 1N3595A-1, 1N3595AUS, AND 1N3595AUR-1, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
This specification covers the performance requirements for silicon, controlled forward voltage diodes. Four levels of product assurance are provided for each device type as specified in...
January 25, 2009
SEMICONDUCTOR DEVICE, DIODE, SILICON, LOW LEAKAGE, CONTROLLED FORWARD VOLTAGE, TYPES 1N3595-1, 1N3595US, 1N3595UR-1, 1N3595A-1, 1N3595AUS, AND 1N3595AUR-1, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
This specification covers the performance requirements for silicon, controlled forward voltage diodes. Four levels of product assurance are provided for each device type as specified in...
June 10, 2008
SEMICONDUCTOR DEVICE, DIODE, SILICON, LOW LEAKAGE, CONTROLLED FORWARD VOLTAGE, TYPES 1N3595-1, 1N3595US, 1N3595UR-1, 1N3595A-1, 1N3595AUS, AND 1N3595AUR-1, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
This specification covers the performance requirements for silicon, controlled forward voltage diodes. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500...
October 23, 2007
SEMICONDUCTOR DEVICE, DIODE, SILICON, LOW LEAKAGE, CONTROLLED FORWARD VOLTAGE TYPES 1N3595-1, 1N3595US, AND 1N3595UR-1, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
This specification covers the performance requirements for silicon, controlled voltage diodes. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500 (see...
MIL-PRF-19500/241
April 19, 2007
SEMICONDUCTOR DEVICE, DIODE, SILICON, LOW LEAKAGE, CONTROLLED FORWARD VOLTAGE TYPES 1N3595-1, 1N3595US, AND 1N3595UR-1, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
This specification covers the performance requirements for silicon, controlled voltage diodes. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500 (see...
March 28, 2005
SEMICONDUCTOR DEVICE, DIODE, SILICON, LOW LEAKAGE, CONTROLLED FORWARD VOLTAGE TYPES 1N3595US, 1N3595UR, 1N3595-1, 1N3595UR-1, AND 1N3595US-1 JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
A description is not available for this item.
May 1, 2000
SEMICONDUCTOR DEVICE, DIODE, SILICON, LOW LEAKAGE, CONTROLLED FORWARD VOLTAGE TYPES 1N3595US, 1N3595UR, 1N3595-1, 1N3595UR-1, AND 1N3595US-1 JAN, JANTX, JANTXV, JANS, JANHC, and JANKC
This specification covers the performance requirements for silicon, controlled voltage diodes. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500 (see...
April 7, 1997
SEMICONDUCTOR DEVICE, DIODE, SILICON, LOW LEAKAGE, CONTROLLED FORWARD VOLTAGE TYPES 1N3595US, 1N3595UR. 1N3595-1, 1N3595UR-1, AND 1N3595US-1 JAN, JANTX, JANTXV, JANS, JANHC, and JANKC
This specification covers the performance requirements for silicon, controlled voltage diodes. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500 (see...
August 16, 1994
SEMICONDUCTOR DEVICE, DIODE, SILICON, LOW LEAKAGE, GENERAL PURPOSE, SWITCHING TYPES 1N3595, IN3595US, 1N3595UR, 1N3595-1, 1N3595UR-1, AND 1N3595US-1 JAN, JANTX, JANTXV, JANS, JANHC, and JANKC
A description is not available for this item.
February 23, 1994
SEMICONDUCTOR DEVICE, DIODE, SILICON, LOW LEAKAGE, GENERAL PURPOSE, SWITCHING TYPES 1N3595, 1N3595US, 1N3595UR, 1N3595-1, 1N3595UR-1, AND lN3595US-1 JAN, JANTX, JANTXV, JANS, JANHC, and JANKC
This specification covers the detail requirements for silicon, switching diodes. Four levels of product assurance are provided for each device type as specified in MIL-S-19500 (see 6.3.2). Two levels...
April 25, 1990
SEMICONDUCTOR DEVICE, DIODE, SILICON, SWITCHING TYPES 1N3595 AND lN3595-1 JAN, JANTX, JANTXV, AND JANS
A description is not available for this item.
September 8, 1989
SEMICONDUCTOR DEVICE, DIODE, SILICON, SWITCHING TYPES 1N3595 AND 1N3595-1 JAN, JANTX, JANTXV AND JANS
A description is not available for this item.
December 28, 1987
SEMICONDUCTOR DEVICE, DIODE, SILICON, SWITCHING TYPES 1N3595 AND 1N3595-1 JAN, JANTX, JANTXV, AND JANS
A description is not available for this item.
November 20, 1973
SEMICONDUCTOR DEVICE, DIODE, SWITCHING TYPES 1N3595 AND TX1N3595
A description is not available for this item.
October 24, 1973
SEMICONDUCTOR DEVICE, DIODE, SILICON, SWITCHING TYPES 1N3595 AND TX1N3595
A description is not available for this item.
June 1, 1973
SEMICONDUCTOR DEVICE, DIODE, SWITCHING TYPES 1N3595 AND TX1N3595
A description is not available for this item.
October 31, 1972
SEMICONDUCTOR DEVICE, DIODE, SWITCHING TYPES 1N3595 AND TX1N3595
A description is not available for this item.
December 20, 1971
SEMICONDUCTOR DEVICE, DIODE, SWITCHING TYPES 1N3595 AND TX1N3595
A description is not available for this item.
November 24, 1970
SEMICONDUCTOR DEVICE, DIODE TYPES JANIN3595 AND JAN TX IN3595
A description is not available for this item.