NPFC - MIL-S-19500/610
SEMICONDUCTOR DEVICE, HERMETIC, DIODE, SILICON, SCHOTTKY BARRIER, TYPES 1N6677-1 AND 1N6677UR-1, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
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| Organization: | NPFC |
| Publication Date: | 22 July 1994 |
| Status: | inactive |
| Page Count: | 11 |
scope:
This specification covers the detail requirements for silicon, Schottky barrier diodes. Four levels of product assurance are provided for each device type as specified in MIL-S-19500. Two levels of product assurance for die (element evaluation).
See figure 1 (DO-35), figure 2 (DO-213AA), and figure 3 (JANC die) dimensions.
Unless otherwise specified, primary electrical characteristics at TA = +25°C. Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this document should be addressed to: Defense Electronics Supply Center, ATTN: DESC-ELD, 1507 Wilmington Pike, Dayton, OH 45444-5765, by using the Standardization Document Improvement Proposal (DD Form 1426) appearing at the end of this document or by letter.
Document History
August 21, 2019
SEMICONDUCTOR DEVICE, DIODE, SILICON, RECTIFIER, SCHOTTKY BARRIER, ENCAPSULATED (AXIAL LEADED AND SURFACE MOUNT) AND UNENCAPSULATED, TYPES 1N6677-1 AND 1N6677UR-1, QUALITY LEVELS JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
Scope.
This specification covers the performance requirements for silicon, Schottky barrier rectifier diodes. Four levels of product assurance (JAN, JANTX, JANTXV, and JANS) are provided for each...
November 9, 2018
Semiconductor Device, Hermetic, Diode, Silicon, Schottky Barrier, Types 1N6677-1 and 1N6677UR-1, JAN, JANTX, JANTXV, JANS, JANHC, and JANKC
A description is not available for this item.
January 16, 2014
SEMICONDUCTOR DEVICE, HERMETIC, DIODE, SILICON, SCHOTTKY BARRIER, TYPES 1N6677-1 AND 1N6677UR-1, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
This specification covers the performance requirements for silicon, Schottky barrier diodes. Four levels of product assurance are provided for each encapsulated device types as specified in...
July 9, 2012
SEMICONDUCTOR DEVICE, HERMETIC, DIODE, SILICON, SCHOTTKY BARRIER, TYPES 1N6677-1 AND 1N6677UR-1, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
This specification covers the performance requirements for silicon, Schottky barrier diodes. Four levels of product assurance are provided for each encapsulated device types as specified in...
November 24, 2008
Semiconductor Device, Hermetic, Diode, Silicon, Schottky Barrier, Types 1N6677-1 and 1N6677UR-1, JAN, JANTX, JANTXV, JANS, JANHC, and JANKC
This specification covers the performance requirements for silicon, Schottky barrier diodes. Four levels of product assurance are provided for each encapsulated device types as specified in...
December 1, 2003
SEMICONDUCTOR DEVICE, HERMETIC, DIODE, SILICON, SCHOTTKY BARRIER, TYPES 1N6677-1 AND 1N6677UR-1, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
This specification covers the performance requirements for silicon, Schottky barrier diodes. Four levels of product assurance are provided for each encapsulated device types as specified in...
September 7, 2000
SEMICONDUCTOR DEVICE, HERMETIC, DIODE, SILICON, SCHOTTKY BARRIER, TYPES 1N6677-1 AND 1N6677UR-1, JAN, JANTX, JANTXV, JANJ, JANS, JANHC, AND JANKC
This specification covers the performance requirements for silicon, Schottky barrier diodes. Five levels of product assurance are provided for each encapsulated device types as specified in...
May 29, 1997
SEMICONDUCTOR DEVICE, HERMETIC, DIODE, SILICON, SCHOTTKY BARRIER, TYPES 1N6677-1 AND 1N6677UR-1, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
This specification covers the performance requirements for silicon, Schottky barrier diodes. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500. Two...
MIL-S-19500/610
July 22, 1994
SEMICONDUCTOR DEVICE, HERMETIC, DIODE, SILICON, SCHOTTKY BARRIER, TYPES 1N6677-1 AND 1N6677UR-1, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
This specification covers the detail requirements for silicon, Schottky barrier diodes. Four levels of product assurance are provided for each device type as specified in MIL-S-19500. Two levels of...
March 21, 1994
SEMICONDUCTOR DEVICE, HERMETIC, DIODE, SILICON, SCHOTTKY BARRIER, TYPES 1N6677-1 AND 1N6677UR-1, JANTX, JANTXV, JANS, JANHC, AND JANKC
This specification covers the detail requirements for silicon, Schottky barrier diodes. Three levels of product assurance are provided for each device type as specified in MIL-S-19500. Two levels of...
July 12, 1993
SEMICONDUCTOR DEVICE, HERMETIC, DIODE, SILICON, SCHOTTKY BARRIER, TYPES 1N6677-1 AND 1N6677UR-1, JANTX, JANTXV, AND JANC
A description is not available for this item.
April 22, 1993
SEMICONDUCTOR DEVICE, HERMETIC, DIODE, SILICON, SCHOTTKY BARRIER, TYPES 1N6677-1 AND 1N6677UR-1, JANTX, JANTXV, AND JANC
This specification covers the detail requirements for silicon, schottky barrier diodes. Three levels of product assurance are provided for each device type as specified in MIL-S-19500.
See figure 1...