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DS/EN 62979

Photovoltaic module – Bypass diode – Thermal runaway test

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Organization: DS
Publication Date: 30 October 2017
Status: active
Page Count: 20
ICS Code (Solar energy engineering): 27.160
scope:

IEC 62979:2017(E) provides a method for evaluating whether a bypass diode as mounted in the module is susceptible to thermal runaway or if there is sufficient cooling for it to survive the transition from forward bias operation to reverse bias operation without overheating. This test methodology is particularly suited for testing of Schottky barrier diodes, which have the characteristic of increasing leakage current as a function of reverse bias voltage at high temperature, making them more susceptible to thermal runaway.

Document History

DS/EN 62979
October 30, 2017
Photovoltaic module – Bypass diode – Thermal runaway test
IEC 62979:2017(E) provides a method for evaluating whether a bypass diode as mounted in the module is susceptible to thermal runaway or if there is sufficient cooling for it to survive the transition...
Photovoltaic module – Bypass diode – Thermal runaway test
This international standard provides a method for evaluating whether a bypass diode (BD) as mounted in the module is susceptible to thermal runaway or if there is sufficient cooling for it to survive...
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