CRC - KE39649
Through Silicon Vias : Materials, Models, Design, and Performance
active, Most Current
| Organization: | CRC |
| Publication Date: | 30 November 2016 |
| Status: | active |
| Page Count: | 232 |
scope:
Recent advances in semiconductor technology offer vertical interconnect access (via) that extend through silicon, popularly known as through silicon via (TSV). This book provides a comprehensive review of the theory behind TSVs while covering most recent advancements in materials, models and designs. Furthermore, depending on the geometry and physical configurations, different electrical equivalent models for Cu, carbon nanotube (CNT) and graphene nanoribbon (GNR) based TSVs are presented. Based on the electrical equivalent models the performance comparison among the Cu, CNT and GNR based TSVs are also discussed.
Document History
KE39649
November 30, 2016
Through Silicon Vias : Materials, Models, Design, and Performance
Recent advances in semiconductor technology offer vertical interconnect access (via) that extend through silicon, popularly known as through silicon via (TSV). This book provides a comprehensive...