CEI EN 60749-28
Semiconductor devices - Mechanical and climatic test methods - Part 28: Electrostatic discharge (ESD) sensitivity testing - Charged device model (CDM) - device level
| Organization: | CEI |
| Publication Date: | 1 November 2017 |
| Status: | active |
| Page Count: | 52 |
| ICS Code (Semiconductor devices in general): | 31.080.01 |
scope:
This part of IEC 60749 establishes the procedure for testing, evaluating, and classifying devices and mircrocircuits according to their susceptibility (sensitivity to damage (sensitivity) to damage or degradation by exposure to a defined field-induced charged device model (CDM) electrostatic discharge (ESD). All packaged semiconductor devices, thin film circuits, surface acoustic wave (SAW). Devices, opto-electronic devices, hybrid integrated circuits (HICs), and multi-chip modules (MCMs) containing any of these devices are to be evaluated according to this document. To perform the tests, the devices are assembled in to a packaged similar to that expected in the final application. This CDM document does not apply to socketed discharge model testers. This document describes the filed-induced (FI) method. An alternative, the direct contact (DC) method, is described in Annex I.
The purpose of this document is to establish a test method that will replicate CDM failures and provide reliable, repeatable CDM ESD test result from tester to tester, regardless of device type. Repeatable data will allow accurate classifications and comparisons of CDM esd sensivity levels.
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