NPFC - MIL-PRF-19500/675
TRANSISTOR, FIELD EFFECT RADIATION HARDENED N-CHANNEL, SILICON TYPES 2N7463, 2N7464, JANTXVR AND JANSR
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| Organization: | NPFC |
| Publication Date: | 29 January 2018 |
| Status: | inactive |
| Page Count: | 26 |
scope:
This specification covers the performance requirements for an N-channel, enhancement-mode, MOSFET, radiation hardened power transistor. Two levels of product assurance (JANTXV and JANS) are provided for each device type as specified in MIL-PRF-19500, with avalanche energy maximum rating (EAS) and maximum avalanche current (IAS). Provisions for radiation hardness assurance (RHA) to one radiation level "R" are provided for JANS and JANTXV product assurance level.
intended Use:
Semiconductors conforming to this specification are intended for original equipment design applications and logistic support of existing equipment
Document History
December 12, 2019
TRANSISTOR, FIELD EFFECT RADIATION HARDENED N-CHANNEL, SILICON TYPES 2N7463, 2N7464, JANTXVR AND JANSR
Scope.
This specification covers the performance requirements for an N-channel, enhancement-mode, MOSFET, radiation hardened power transistor. Two levels of product assurance (JANTXV and JANS) are...
November 26, 2018
TRANSISTOR, FIELD EFFECT RADIATION HARDENED N-CHANNEL, SILICON TYPES 2N7463, 2N7464, JANTXVR AND JANSR
This specification covers the performance requirements for an N-channel, enhancement-mode, MOSFET, radiation hardened power transistor. Two levels of product assurance (JANTXV and JANS) are provided...
MIL-PRF-19500/675
January 29, 2018
TRANSISTOR, FIELD EFFECT RADIATION HARDENED N-CHANNEL, SILICON TYPES 2N7463, 2N7464, JANTXVR AND JANSR
This specification covers the performance requirements for an N-channel, enhancement-mode, MOSFET, radiation hardened power transistor. Two levels of product assurance (JANTXV and JANS) are provided...
March 25, 2013
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTORS, N-CHANNEL, SILICON TYPES 2N7463T2, 2N7464T2, 2N7463U5 AND 2N7464U5 JANTXVR AND JANSR
This specification covers the performance requirements for an N-channel, enhancement-mode, MOSFET, radiation hardened power transistor. Two levels of product assurance are provided for each device...
March 12, 2008
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTORS, N-CHANNEL, SILICON TYPES 2N7463T2, 2N7464T2, 2N7463U5 AND 2N7464U5 JANTXVR AND JANSR
This specification covers the performance requirements for an N-channel, enhancement-mode, MOSFET, radiation hardened (total dose and Single Event Effects (SEE)), power transistor. Two levels of...
February 8, 2005
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTORS, N-CHANNEL, SILICON TYPES 2N7463T2 AND 2N7464T2 AND U5 SUFFIXES JANTXVR AND JANSR
This specification covers the performance requirements for an N-channel, enhancement-mode, MOSFET, radiation hardened (total dose and Single Event Effects (SEE)), power transistor. Two levels of...
May 8, 2003
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTORS, N-CHANNEL, SILICON TYPES 2N7463T2 AND 2N7464T2 AND U5 SUFFIXES JANTXVR AND JANSR
This specification covers the performance requirements for an N-channel, enhancement-mode, MOSFET, radiation hardened (total dose and Single Event Effects (SEE)), power transistor. Two levels of...
October 30, 2001
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTORS, N-CHANNEL, SILICON TYPES 2N7463T2 AND 2N7464T2 AND U5 SUFFIXES JANTXVR AND JANSR
A description is not available for this item.
August 30, 2001
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTORS, N-CHANNEL, SILICON TYPES 2N7463T2 AND 2N7464T2 AND U5 SUFFIXES JANTXVR AND JANSR
This specification covers the performance requirements for an N-channel, enhancement-mode, MOSFET, radiation hardened (total dose and Single Event Effects (SEE)), power transistor. Two levels of...
May 22, 2000
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTORS, N-CHANNEL, SILICON TYPES 2N7463T2 AND 2N7464T2 AND U5 SUFFIXES JANTXVR AND JANSR
This specification covers the performance requirements for an N-channel, enhancement-mode, MOSFET, radiation hardened (total dose and Single Event Effects), power transistor. Two levels of product...