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NEN-IEC 60747-4

Semiconductor devices - Discrete devices - Part 4: Microwave diodes and transistors

active
Organization: NEN
Publication Date: 1 October 2007
Status: active
Page Count: 145
ICS Code (Transistors): 31.080.30
ICS Code (Other semiconductor devices): 31.080.99
ICS Code (Diodes): 31.080.10
scope:

This part of IEC 60747 gives requirements for the following categories of discrete devices: - variable capacitance diodes and snap-off diodes (for tuning, up-converter or harmonic multiplication, switching, limiting, phased shift, parametric amplification); - mixer diodes and detector diodes; - avalanche diodes (for direct harmonic generation, amplification); - gunn diodes (for direct harmonic generation); - bipolar transistors (for amplification, oscillation); - field-effect transistors (for amplification, oscillation).

Document History

February 1, 2017
Semiconductor devices - Discrete devices - Part 4: Microwave diodes and transistors
A description is not available for this item.
NEN-IEC 60747-4
October 1, 2007
Semiconductor devices - Discrete devices - Part 4: Microwave diodes and transistors
This part of IEC 60747 gives requirements for the following categories of discrete devices: - variable capacitance diodes and snap-off diodes (for tuning, up-converter or harmonic multiplication,...
October 1, 1999
Semiconductor devices - Discrete devices - Part 4: Microwave diodes and transistors
Gives standards for the following categories of discrete devices: variable capacitance diodes and snap-off diodes, mixer diodes and detector diodes, avalanche diodes, gunn diodes, bipolar transistors...
September 1, 1999
Semiconductor devices - Discrete devices - Part 4: Microwave diodes and transistors
A description is not available for this item.
September 1, 1999
Semiconductor devices - Discrete devices - Part 4: Microwave devices
A description is not available for this item.
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