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NEN-ISO 4

Measurement of thermal conductivity of thin films on silicon substrates

active, Most Current
Organization: NEN
Publication Date: 1 March 2003
Status: active
Page Count: 30
ICS Code (Non-destructive testing): 19.100
scope:

A standard procedure for the three-omega method is proposed for measuring the thermal conductivity of a thin, electrically insulating film, on a substrate having a thermal conductivity significantly greater than the thermal conductivity of the film. This method is applicable to a film on a silicon substrate with the following characteristics: a) the film is electrically insulating; b) the film has a thermal conductivity that is less than one tenth the thermal conductivity of silicon; c) the film is uniform in thickness and the thickness lies in the range 0,25 µm to 1 µm; d) the maximum dimensions of the film are limited by the sizes of the preparation and measurement apparatus; e) the minimum dimensions of the film are limited by the minimum size of the circuit element that can be placed on the film surface.

Document History

NEN-ISO 4
March 1, 2003
Measurement of thermal conductivity of thin films on silicon substrates
A standard procedure for the three-omega method is proposed for measuring the thermal conductivity of a thin, electrically insulating film, on a substrate having a thermal conductivity significantly...
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