NEN-EN-IEC 60749-44
Semiconductor devices - Mechanical and climatic test methods - Part 44: Neutron beam irradiated single event effect (SEE) test method for semiconductor devices
active, Most Current
| Organization: | NEN |
| Publication Date: | 1 November 2016 |
| Status: | active |
| Page Count: | 51 |
| ICS Code (Semiconductor devices in general): | 31.080.01 |
scope:
NEN-EN- IEC 60749-44 establishes a procedure for measuring the single event effects (SEEs) on high density integrated circuit semiconductor devices including data retention capability of semiconductor devices with memory when subjected to atmospheric neutron radiation produced by cosmic rays. The single event effects sensitivity is measured while the device is irradiated in a neutron beam of known flux. This test method can be applied to any type of integrated circuit.
Document History
NEN-EN-IEC 60749-44
November 1, 2016
Semiconductor devices - Mechanical and climatic test methods - Part 44: Neutron beam irradiated single event effect (SEE) test method for semiconductor devices
NEN-EN- IEC 60749-44 establishes a procedure for measuring the single event effects (SEEs) on high density integrated circuit semiconductor devices including data retention capability of...