NEN-ISO 12406
Surface chemical analysis - Secondary-ion mass spectrometry - Method for depth profiling of arsenic in silicon
active, Most Current
| Organization: | NEN |
| Publication Date: | 1 November 2010 |
| Status: | active |
| Page Count: | 22 |
| ICS Code (Chemical analysis): | 71.040.40 |
scope:
This International Standard specifies a secondary-ion mass spectrometric method using magnetic-sector or quadrupole mass spectrometers for depth profiling of arsenic in silicon, and using stylus profilometry or optical interferometry for depth calibration. This method is applicable to single-crystal, poly-crystal or amorphous silicon specimens with arsenic atomic concentrations between 1 × 1016 atoms/cm3 and 2,5 × 1021 atoms/cm3, and to crater depths of 50 nm or deeper.
Document History
NEN-ISO 12406
November 1, 2010
Surface chemical analysis - Secondary-ion mass spectrometry - Method for depth profiling of arsenic in silicon
This International Standard specifies a secondary-ion mass spectrometric method using magnetic-sector or quadrupole mass spectrometers for depth profiling of arsenic in silicon, and using stylus...