UNLIMITED FREE
ACCESS
TO THE WORLD'S BEST IDEAS

SUBMIT
Already a GlobalSpec user? Log in.

This is embarrasing...

An error occurred while processing the form. Please try again in a few minutes.

Customize Your GlobalSpec Experience

Finish!
Privacy Policy

This is embarrasing...

An error occurred while processing the form. Please try again in a few minutes.

NEN 10147-2

Semiconductor devices - Part 2: General principles of measuring methods

inactive, Most Current
Organization: NEN
Publication Date: 1 July 1986
Status: inactive
ICS Code (Electronic components in general): 31.020
scope:

Gives information based on current practice on measurements of certain device parameters and deals primarily with the parameters listed in Publication 147-1. Deals with low-power signal diodes, voltage reference diodes, voltage regulator diodes and variable capacitance diodes. Deals with tunnel diodes and varactor diodes. Describes the measuring methods applicable to fieldeffect transistors whether junction gate or insulated-gate type. Describes the measuring methods applicable to two kinds of analogue integrated circuits: lineair amplifiers (including operational amplifiers) and voltage regulators (excluding single-part devices). Gives an alternative method to that described in Publication 147-2F for measuring the main parameters of varactor diodes by means of a coaxial cavity. Specifies conditions for measuring static characteristics of digital integrated circuits. Deals with measuring methods for signal and voltageregulators diodes, bipolar and field-effect transistors.

Document History

NEN 10147-2
July 1, 1986
Semiconductor devices - Part 2: General principles of measuring methods
Gives information based on current practice on measurements of certain device parameters and deals primarily with the parameters listed in Publication 147-1. Deals with low-power signal diodes,...

References

Advertisement