DLA - DSCC-DWG-V62/18608
MICROCIRCUIT, LINEAR, GALLIUM ARSENIDE, NONREFLECTIVE, 0.1 GHz TO 8 GHz SP4T SWITCH, MONOLITHIC SILICON
inactive
| Organization: | DLA |
| Publication Date: | 24 May 2018 |
| Status: | inactive |
| Page Count: | 12 |
scope:
This drawing documents the general requirements of a gallium arsenide (GaAs) nonreflective, 0.1 GHz to 8 GHz single pole, four throw (SP4T) switch microcircuit, with an operating temperature range of -55 degrees C to +125 degrees C
Document History
September 8, 2023
MICROCIRCUIT, LINEAR, MONOLITHIC, GALLIUM ARSENIDE, NONREFLECTIVE, 0.1 GHz TO 8 GHz SP4T SWITCH
Scope.
This drawing documents the general requirements of a high performance gallium arsenide (GaAs) nonreflective, 0.1 GHz to 8 GHz single pole, four throw (SP4T) switch microcircuit, with an...
DSCC-DWG-V62/18608
May 24, 2018
MICROCIRCUIT, LINEAR, GALLIUM ARSENIDE, NONREFLECTIVE, 0.1 GHz TO 8 GHz SP4T SWITCH, MONOLITHIC SILICON
This drawing documents the general requirements of a gallium arsenide (GaAs) nonreflective, 0.1 GHz to 8 GHz single pole, four throw (SP4T) switch microcircuit, with an operating temperature range of...