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DLA - SMD-5962-89538 REV A

MICROCIRCUIT, MEMORY, DIGITAL, CMOS 16K X 8 UV EPROM, POWER DOWN, MONOLITHIC SILICON

inactive
Organization: DLA
Publication Date: 12 January 1993
Status: inactive
Page Count: 13
scope:

This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883. "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices".

The complete PIN shall be as shown in the following example:

The device type(s) shall identify the circuit function as follows:

Device type Generic number Circuit function Access time 01 CY7C254 16K × 8 UV EPROM 65 ns 02 CY7C254 16K × 8 UV EPROM 55 ns 03 CY7C254 16K × 8 UV EPROM 45 ns

The case outline(s) shall be as designated in MIL-STD-1835 and as follows:

Outline letter Descriptive designator Terminals Package style U CQCC1-N32 32 Rectangular leadless chip carrier 1/ X GDIP1-T28 or CDIP2-T28 28 Dual-in-line 1/ Z GDFP2-F28 28 Flat pack 1/

The lead finish shall be as specified in MIL-M-38510. Finish letter "X" shall not be marked on the microcircuit or its packaging. The "X" designation is for use in specifications when lead finishes A, B, and C are considered acceptable and interchangeable without preference.

Supply voltage range - - - - - - - - - - - - - - - - −0.5 V dc to +7.0 V dc DC voltage applied to Outputs in high Z- - - - - - - −0.5 V dc to +7.0 V dc DC input voltage - - - - - - - - - - - - - - - - - - −3.0 V dc to +7.0 V dc Thermal resistance, junction-to-case (θJC): Case outlines U, X, and Z - - - - - - - - - - - - See MIL-STD-1835 Maximum power dissipation (PD) 2/ - - - - - - - - - 1.0 W Maximum junction temperature (TJ) - - - - - - - - - +175°C Lead temperature (soldering, 10 seconds maximum) - - +260°C Storage temperature range - - - - - - - - - - - - - −65°C to +150°C Temperature under bias range - - - - - - - - - - - - −55°C to +125°C

Supply voltage (VCC) - - - - - - - - - - - - - - - - 4.5 V dc to 5.5 V dc High level input voltage (VIH) - - - - - - - - - - - 2.0 V dc minimum Low level input voltage (VIL) - - - - - - - - - - - 0.8 V dc maximum Case operating temperature range (TC)- - - - - - - - −55°C to +125°C

intended Use:

Microcircuits conforming to this drawing are intended for use when military specifications do not exist and qualified military devices that will perform the required function are not available for... View More

Document History

December 8, 2017
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 16K X 8 UVEPROM, POWER DOWN, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for government microcircuit applications (original equipment), design applications, and logistics purposes.
March 15, 2011
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 16K X 8 UV EPROM, POWER DOWN, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for government microcircuit applications (original equipment), design applications, and logistics purposes.
SMD-5962-89538 REV A
January 12, 1993
MICROCIRCUIT, MEMORY, DIGITAL, CMOS 16K X 8 UV EPROM, POWER DOWN, MONOLITHIC SILICON
This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883. "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices"....
January 26, 1989
MICROCIRCUIT, MEMORY, DIGITAL, CMOS 16K X 8 UV EPROM, POWER DOWN, MONOLITHIC SILICON
A description is not available for this item.
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