DS/EN 62374
Semiconductor devices - Time Dependent Dielectric Breakdown (TDDB) test for gate dielectric films
inactive, Most Current
| Organization: | DS |
| Publication Date: | 4 December 2007 |
| Status: | inactive |
| Page Count: | 26 |
| ICS Code (Semiconductor devices in general): | 31.080.01 |
scope:
This International Standard provides a test method of Time Dependent Dielectric Breakdown (TDDB) for gate dielectric films on semiconductor devices and a product lifetime estimation method of TDDB failure.
Document History
DS/EN 62374
December 4, 2007
Semiconductor devices - Time Dependent Dielectric Breakdown (TDDB) test for gate dielectric films
This International Standard provides a test method of Time Dependent Dielectric Breakdown (TDDB) for gate dielectric films on semiconductor devices and a product lifetime estimation method of TDDB...
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