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DLA - SMD-5962-94761

MICROCIRCUIT, MEMORY, DIGITAL, CMOS, ELECTRICALLY ERASABLE PROGRAMMABLE LOGIC DEVICE, MONOLITHIC SILICON

inactive
Organization: DLA
Publication Date: 21 December 1994
Status: inactive
Page Count: 20
scope:

This drawing forms a part of a one part - one part number documentation system (see 6.6 herein). Two product assurance classes consisting of military high reliability (device classes Q and M) and space application (device class V), and a choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). Device class M microcircuits represent non-JAN class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices". When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN.

The PIN shall be as shown in the following example:

Device class M RHA marked devices shall meet the MIL-I-38535 appendix A specified RHA levels and shall be marked with the appropriate RHA designator. Device classes Q and V RHA marked devices shall meet the MIL-I-38535 specified RHA levels and shall be marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device.

The device type(s) shall identify the circuit function as follows:

Maximum Device type Generic number Circuit function clock frequency 01 ispLSI1024 EECMOS 4,000 gate in-system 60 MHz programmable logic device

The device class designator shall be a single letter identifying the product assurance level as follows:

Device class Device requirements documentation M Vendor self-certification to the requirements for non-JAN class B microcircuits in accordance with 1.2.1 of MIL-STD-883 Q or V Certification and qualification to MIL-I-38535

The case outline(s) shall be as designated in MIL-STD-1835 and as follows:

Outline letter Descriptive designator Terminals Package style X CQCC2-J68 68 J-Leaded chip carrier

The lead finish shall be as specified in MIL-STD-883 (see 3.1 herein) for class M or MIL-I-38535 for classes Q and V. Finish letter "X" shall not be marked on the microcircuit or its packaging. The "X" designation is for use in specifications when lead finishes A, B, and C are considered acceptable and interchangeable without preference.

Supply voltage range . . . . . . . . . . . . . . . . . . . −0.5 Vdc to +7.0 V dc Input voltage range (applied) . . . . . . . . . . . . . . . −2.5 Vdc to VCC + 1.0 Vdc Off-state output voltage range applied. . . . . . . . . . . −2.5 Vdc to VCC + 1.0 Vdc Thermal resistance, junction-to-case (θJC). . . . . . . . . See MIL-STD-1835 Maximum power dissipation (PD) 2/ . . . . . . . . . . . . 2.1 W Maximum junction temperature . . . . . . . . . . . . . . . +175°C Lead temperature (soldering, 10 seconds max) . . . . . . . +300°C Data retention (at +55°C) . . . . . . . . . . . . . . . . . 20 years (minimum) Endurance . . . . . . . . . . . . . . . . . . . . . . . . . 1000 erase/write cycles (minimum)

Supply voltage range, VCC . . . . . . . . . . . . . . . . .4.5 Vdc to 5.5 Vdc High level input voltage range (VIH) . . . . . . . . . . .2.0 V dc to VCC + 1.0 V dc Low level input voltage range (VIL) . . . . . . . . . . .0.0 V dc to 0.8 V dc Case operating temperature range, TC . . . . . . . . . . .−55°C to +125°C

Fault coverage measurement of manufacturing logic tests (MIL-STD-883, test method 5012). . . . . . . . . . .XX percent 3/

intended Use:

Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.

Microcircuits... View More

Document History

August 21, 2017
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, ELECTRICALLY ERASABLE PROGRAMMABLE LOGIC DEVICE, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes...
July 10, 2008
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, ELECTRICALLY ERASABLE PROGRAMMABLE LOGIC DEVICE, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes...
April 17, 2002
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, ELECTRICALLY ERASABLE PROGRAMMABLE LOGIC DEVICE, MONOLITHIC SILICON
A description is not available for this item.
SMD-5962-94761
December 21, 1994
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, ELECTRICALLY ERASABLE PROGRAMMABLE LOGIC DEVICE, MONOLITHIC SILICON
This drawing forms a part of a one part - one part number documentation system (see 6.6 herein). Two product assurance classes consisting of military high reliability (device classes Q and M) and...
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