NPFC - MIL-PRF-19500/415
Semiconductor, Device, Transistor, NPN, Silicon, High-Power Types 2N2812 and 2N2814 JAN, JANTX, and JANTXV
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| Organization: | NPFC |
| Publication Date: | 20 November 2008 |
| Status: | inactive |
| Page Count: | 1 |
scope:
This specification covers the performance requirements for NPN, silicon, high-power transistors. Three levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500.
intended Use:
The notes specified in MIL-PRF-19500 are applicable to this specification.
Document History
June 8, 2021
TRANSISTOR, NPN, SILICON, HIGH POWER, STUD MOUNT CASE, TYPES 2N2812 AND 2N2814, QUALITY LEVELS JAN, JANTX, AND JANTXV
Scope.
This specification covers the performance requirements for NPN, silicon, high-power transistors. Three levels of product assurance (JAN, JANTX, and JANTXV) are provided for each encapsulated...
May 17, 2016
TRANSISTOR, NPN, SILICON, HIGH POWER, STUD MOUNT CASE, TYPES 2N2812 AND 2N2814, QUALITY LEVELS JAN, JANTX, AND JANTXV
This specification covers the performance requirements for NPN, silicon, high-power transistors. Three levels of product assurance (JAN, JANTX, and JANTXV) are provided for each encapsulated device...
January 14, 2015
TRANSISTOR, NPN, SILICON, HIGH POWER, STUD MOUNT CASE, TYPES 2N2812 AND 2N2814, QUALITY LEVELS JAN, JANTX, AND JANTXV
This specification covers the performance requirements for NPN, silicon, high-power transistors. Three levels of product assurance (JAN, JANTX, and JANTXV) are provided for each encapsulated device...
MIL-PRF-19500/415
November 20, 2008
Semiconductor, Device, Transistor, NPN, Silicon, High-Power Types 2N2812 and 2N2814 JAN, JANTX, and JANTXV
This specification covers the performance requirements for NPN, silicon, high-power transistors. Three levels of product assurance are provided for each encapsulated device type as specified in...
October 31, 2003
SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, HIGH-POWER TYPES 2N2812 AND 2N2814 JAN, JANTX, AND JANTXV
This specification covers the performance requirements for NPN, silicon, high-power transistors. Three levels of product assurance are provided for each encapsulated device type as specified in...
June 7, 1999
SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, HIGH-POWER TYPES 2N2812 AND 2N2814 JAN, JANTX, AND JANTXV
A description is not available for this item.
September 9, 1986
SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, HIGH-POWER TYPES 2N2812 AND 2N2814 JAN, JANTX, AND JANTXV
A description is not available for this item.
April 18, 1973
SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, HIGH-POWER TYPES 2N2812 AND 2N2814 JAN, JANTX, AND JANTXV
A description is not available for this item.
December 16, 1970
SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, HIGH-POWER TYPES 2N2812 AND 2N2814 JAN, JANTX, AND JANTXV
A description is not available for this item.
July 10, 1969
SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, HIGH-POWER TYPES 2N2812 AND 2N2814 JAN, JANTX, AND JANTXV
This specification covers the detail requirements for NPN, silicon, high-power transistors. The prefix "TX" is used on devices submitted to and passing the special process conditioning, testing, and...