ISO 23812
Surface chemical analysis — Secondary-ion mass spectrometry — Method for depth calibration for silicon using multiple delta-layer reference materials
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| Organization: | ISO |
| Publication Date: | 15 April 2009 |
| Status: | active |
| Page Count: | 26 |
| ICS Code (Chemical analysis): | 71.040.40 |
scope:
This International Standard specifies a procedure for calibrating the depth scale in a shallow region, less than 50 nm deep, in SIMS depth profiling of silicon, using multiple delta-layer reference materials.
This International Standard is not applicable to the surface-transient region where the sputtering rate is not in the steady state.
This International Standard is applicable to single-crystalline silicon, polycrystalline silicon and amorphous silicon.
Document History
ISO 23812
April 15, 2009
Surface chemical analysis — Secondary-ion mass spectrometry — Method for depth calibration for silicon using multiple delta-layer reference materials
This International Standard specifies a procedure for calibrating the depth scale in a shallow region, less than 50 nm deep, in SIMS depth profiling of silicon, using multiple delta-layer reference...