NPFC - MIL-PRF-19500/742
SEMICONDUCTOR DEVICE, DIODE, SILICON, ULTRAFAST RECOVERY, POWER RECTIFIER, TYPES 1N5802CB, 1N5804CB, 1N5806CB, 1N5807CB, 1N5809CB, AND 1N5811CB, 1N5802CBUS, 1N5804CBUS, 1N5806CBUS, 1N5807CBUS, 1N5809CBUS, AND 1N5811CBUS, JAN, JANTX, AND JANTXV
inactive
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| Organization: | NPFC |
| Publication Date: | 28 August 2009 |
| Status: | inactive |
| Page Count: | 30 |
scope:
This specification covers the performance requirements for silicon, fast recovery, power rectifier diodes. Four levels of product assurance are provided for each encapsulated (noncavity double plug diodes utilizing category 3 metallurgical bonding) device types as specified in MIL-PRF-19500. This category 3 metallurgical bonding is also known as compression bonds (CB).
intended Use:
Semiconductors conforming to this specification are intended for original equipment design applications and logistic support of existing equipment.
Document History
July 12, 2019
SEMICONDUCTOR DEVICE, DIODE, SILICON, ULTRAFAST RECOVERY, POWER RECTIFIER, TYPES 1N5802CB, 1N5804CB, 1N5806CB, 1N5807CB, 1N5809CB, AND 1N5811CB, AXIAL LEADED AND SURFACE MOUNT PACKAGE, QUALITY LEVELS JAN, JANTX, AND JANTXV
Scope.
This specification covers the performance requirements for silicon, fast recovery, power rectifier diodes. Four levels of product assurance (JAN, JANTX, and JANTXV) are provided for each...
July 16, 2014
SEMICONDUCTOR DEVICE, DIODE, SILICON, ULTRAFAST RECOVERY, POWER RECTIFIER, TYPES 1N5802CB, 1N5804CB, 1N5806CB, 1N5807CB, 1N5809CB, AND 1N5811CB, 1N5802CBUS, 1N5804CBUS, 1N5806CBUS, 1N5807CBUS, 1N5809CBUS, AND 1N5811CBUS, JAN, JANTX, AND JANTXV
This specification covers the performance requirements for silicon, fast recovery, power rectifier diodes. Four levels of product assurance are provided for each encapsulated (noncavity double plug...
MIL-PRF-19500/742
August 28, 2009
SEMICONDUCTOR DEVICE, DIODE, SILICON, ULTRAFAST RECOVERY, POWER RECTIFIER, TYPES 1N5802CB, 1N5804CB, 1N5806CB, 1N5807CB, 1N5809CB, AND 1N5811CB, 1N5802CBUS, 1N5804CBUS, 1N5806CBUS, 1N5807CBUS, 1N5809CBUS, AND 1N5811CBUS, JAN, JANTX, AND JANTXV
This specification covers the performance requirements for silicon, fast recovery, power rectifier diodes. Four levels of product assurance are provided for each encapsulated (noncavity double plug...
June 1, 2007
SEMICONDUCTOR DEVICE, DIODE, SILICON, ULTRAFAST RECOVERY, POWER RECTIFIER, TYPES 1N5802CB, 1N5804CB, 1N5806CB, 1N5807CB, 1N5809CB, AND 1N5811CB, 1N5802CBUS, 1N5804CBUS, 1N5806CBUS, 1N5807CBUS, 1N5809CBUS, AND 1N5811CBUS, JAN, JANTX, JANTXV, AND JANS
This specification covers the performance requirements for silicon, fast recovery, power rectifier diodes. Four levels of product assurance are provided for each encapsulated (noncavity double plug...