DLA - MIL-S-19500/483A
SEMICONDUCTOR DEVICE, SILICON, HIGH-POWER, THREE PHASE, FULL UAVE BRIDGE RECTIFIER PART NUMBERS M19500/483-01 THROUGH M19500/483-04 JANTX
inactive
| Organization: | DLA |
| Publication Date: | 20 November 1994 |
| Status: | inactive |
| Page Count: | 10 |
scope:
This specification covers the detail requirements for silicon, three phase, full wave bridge rectifiers, intended for use in applications at frequencies of I kHz or Less. One Level of product assurance is provided for each device type as specified in MIL-S-19500.
See figure 1.
Operating temperature: −65°C to +150°C Storage ambient temperature: −65°C to +150°C
Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this document should be addressed to: Defense Electronics Supply Center, ATTN: DESC-ELDT, 1507 Wilmington Pike, Dayton, OH 45444-5765 by using the Standardization Document Improvement Proposal (DD Form 1426) appearing at the end of this document or by Letter.
Document History
May 7, 2021
RECTIFIER, SEMICONDUCTOR DEVICE, UNITIZED, SILICON, HIGH-POWER, THREE PHASE, FULL WAVE BRIDGE RECTIFIER, TYPES M19500/483-01 THROUGH M19500/483-04, QUALITY LEVEL JANTX
Scope.
This specification covers the performance requirements for silicon, 3-phase, full wave bridge rectifiers intended for use in applications at frequencies of 1 kHz or less. One level of product...
June 28, 2019
RECTIFIER, SEMICONDUCTOR DEVICE, UNITIZED, SILICON, HIGH-POWER, THREE PHASE, FULL WAVE BRIDGE RECTIFIER, TYPES M19500/483-01 THROUGH M19500/483-04, QUALITY LEVEL JANTX
Scope.
This specification covers the performance requirements for silicon, 3-phase, full wave bridge rectifiers intended for use in applications at frequencies of 1 kHz or less. One level of product...
December 11, 2017
Semiconductor Device, Silicon, High-Power, Three Phase, Full Wave Bridge Rectifier, Types M19500/483-01 through M19500/483- 04, JANTX
A description is not available for this item.
February 22, 2013
SEMICONDUCTOR DEVICE, SILICON, HIGH-POWER, THREE PHASE, FULL WAVE BRIDGE RECTIFIER, TYPES M19500/483-01 THROUGH M19500/483-04, JANTX
This specification covers the performance requirements for silicon, 3-phase, full wave bridge rectifiers intended for use in applications at frequencies of 1 kHz or less. One level of product...
April 2, 2009
SEMICONDUCTOR DEVICE, SILICON, HIGH-POWER, THREE PHASE, FULL WAVE BRIDGE RECTIFIER, TYPES M19500/483-01 THROUGH M19500/483-04, JANTX
This specification covers the performance requirements for silicon, 3-phase, full wave bridge rectifiers intended for use in applications at frequencies of 1 kHz or less. One level of product...
November 16, 2006
SEMICONDUCTOR DEVICE, SILICON, HIGH-POWER, THREE PHASE, FULL WAVE BRIDGE RECTIFIER, TYPES M19500/483-01 THROUGH M19500/483-04, JANTX
This specification covers the performance requirements for silicon, three phase, full wave bridge rectifiers, intended for use in applications at frequencies of 1 kHz or less. One level of product...
March 28, 2005
SEMICONDUCTOR DEVICE, SILICON, HIGH-POWER, THREE PHASE, FULL WAVE BRIDGE RECTIFIER PART NUMBERS M19500/483-01 THROUGH M19500/483-04 JANTX
A description is not available for this item.
June 9, 2000
SEMICONDUCTOR DEVICE, SILICON, HIGH-POWER, THREE PHASE, FULL WAVE BRIDGE RECTIFIER PART NUMBERS M19500/483-01 THROUGH M19500/483-04 JANTX
A description is not available for this item.
July 20, 1999
SEMICONDUCTOR DEVICE, SILICON, HIGH-POWER, THREE PHASE, FULL WAVE BRIDGE RECTIFIER, TYPES M19500/483-01 THROUGH M19500/483-04, JANTX
This specification covers the performance requirements for silicon, three phase, full wave bridge rectifiers, intended for use in applications at frequencies of 1 kHz or less. One level of product...
MIL-S-19500/483A
November 20, 1994
SEMICONDUCTOR DEVICE, SILICON, HIGH-POWER, THREE PHASE, FULL UAVE BRIDGE RECTIFIER PART NUMBERS M19500/483-01 THROUGH M19500/483-04 JANTX
This specification covers the detail requirements for silicon, three phase, full wave bridge rectifiers, intended for use in applications at frequencies of I kHz or Less. One Level of product...
October 24, 1985
SEMICONDUCTOR DEVICE, SILICON, HIGH POWER, THREE PHASE, FULL WAVE BRIDGE RECTIFIER
A description is not available for this item.
September 11, 1984
SEMICONDUCTOR DEVICE, SILICON, HIGH POWER, THREE PHASE, FULL WAVE BRIDGE RECTIFIER PART NUMBERS M19500/483-01 THROUGH M19500/433-04
A description is not available for this item.
July 12, 1982
SEMICONDUCTOR DEVICE, SILICON, HIGH-POWER, THREE PHASE, FULL WAVE BRIDGE RECTIFIER, TYPES M19500/483-01 THROUGH M19500/483-04, JANTX
A description is not available for this item.
October 6, 1976
SEMICONDUCTOR DEVICE, SILICON, HIGH POWER, THREE PHASE, FULL WAVE BRIDGE RECTIFIER PART NUFBERS MI19500/483-01 THROUGH MI19500/483-04
A description is not available for this item.
April 23, 1973
SEMICONDUCTOR DEVICE, SILICON, HIGH POWER, THREE PHASE, FULL WAVE BRIDGE RECTIFIER, PART NUMBER M19500/483-01 THROUGH M19500/483-04
This specification covers the detail requirements for three phase bridge rectifiers for use at frequencies of 1 kHz, or less.
See figure 1.