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DLA - SMD-5962-96796

MICROCIRCUIT, MEMORY, 128K X 8-BIT, ELECTRICALLY ERASABLE PROGRAMMABLE READ ONLY MEMORY, MONOLITHIC SILICON

inactive
Organization: DLA
Publication Date: 21 October 1996
Status: inactive
Page Count: 20
scope:

This drawing documents five product assurance classes, class D (lowest reliability), class E, (exceptions), class G (lowest high reliability), class H (high reliability), and class K, (highest reliability) and a choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of radiation hardness assurance levels are reflected in the PIN.

The PIN shall be as shown in the following example:

Device classes H and K RHA marked devices shall meet the MIL-PRF-38534 specified RHA levels and shall be marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device.

The device type(s) shall identify the circuit function as follows:

Device type Generic number Circuit function Access time 01 WME128K8-300CQ EEPROM, 128K × 8-bit 300 ns 02 WME128K8-250CQ EEPROM, 128K × 8-bit 250 ns 03 WME128KB-200CQ EEPROM, 128K × 8-bit 200 ns 04 WME128KB-150CQ EEPROM, 128K × 8-bit 150 ns 05 WME128KB-140CQ EEPROM, 128K × 8-bit 140 ns

This device class designator shall be a single letter identifying the product assurance level as follows:

Device class Device performance documentation H or K Certification and Qualification to MIL-PRF-38534

The case outline(s) shall be as designated in MIL-STD-1835 and as follows:

Outline letter Descriptive designator Terminals Package style X See figure 1 32 Co-fired ceramic SOJ Y See figure 1 32 Co-fired ceramic dual-in-line

The lead finish shall be as specified in MIL-PRF-38534.

Supply voltage range (VCC) ............................ −0.6 V dc to +6.25 V dc Signal voltage range (VG) .............................. −0.6 V dc to +6.25 V dc Power dissipation (PD) ................................. 0.44W Max. Storage temperature range ............................. −65°C to +150°C Lead temperature (soldering, 10 seconds) .............. +300°C Data retention ......................................... 10 years minimum Endurance (write/erase cycles) ........................ 10,000 cycles minimum Voltage on [O bar][E bar] and A9 .................................. −0.6 V dc to +13.5 V dc

Supply voltage range (VCC) ............................ +4.5 V dc to +5.5 V dc Input low voltage range (VIL) .......................... −0.3 V dc to +0.8 V dc Input high voltage range (VIH) ......................... +2.0 V dc to VCC + 0.3 V dc Case operating temperature range (TC) ................. −55°C to +125°C

intended Use:

Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.

Document History

January 23, 2018
MICROCIRCUIT, MEMORY, 128K X 8-BIT, ELECTRICALLY ERASABLE PROGRAMMABLE READ ONLY MEMORY, MONOLITHIC SILICON
This drawing documents five product assurance classes as defined in paragraph 1.2.3 and MIL-PRF-38534. A choice of case outlines and lead finishes which are available and are reflected in the Part or...
February 5, 2007
MICROCIRCUIT, MEMORY, 128K X 8-BIT, ELECTRICALLY ERASABLE PROGRAMMABLE READ ONLY MEMORY, MONOLITHIC SILICON
This drawing documents five product assurance classes as defined in paragraph 1.2.3 and MIL-PRF-38534. A choice of case outlines and lead finishes which are available and are reflected in the Part or...
September 14, 2001
MICROCIRCUIT, MEMORY, 128K X 8-BIT, ELECTRICALLY ERASABLE PROGRAMMABLE READ ONLY MEMORY, MONOLITHIC SILICON
A description is not available for this item.
May 5, 2000
MICROCIRCUIT, MEMORY, 128K X 8-BIT, ELECTRICALLY ERASABLE PROGRAMMABLE READ ONLY MEMORY, MONOLITHIC SILICON
This drawing documents five product assurance classes, class D (lowest reliability), class E, (exceptions), class G (lowest high reliability), class H (high reliability), and class K, (highest...
March 10, 1999
MICROCIRCUIT, MEMORY, 128K X 8-BIT, ELECTRICALLY ERASABLE PROGRAMMABLE READ ONLY MEMORY, MONOLITHIC SILICON
This drawing documents five product assurance classes, class D (lowest reliability), class E, (exceptions), class G (lowest high reliability), class H (high reliability), and class K, (highest...
SMD-5962-96796
October 21, 1996
MICROCIRCUIT, MEMORY, 128K X 8-BIT, ELECTRICALLY ERASABLE PROGRAMMABLE READ ONLY MEMORY, MONOLITHIC SILICON
This drawing documents five product assurance classes, class D (lowest reliability), class E, (exceptions), class G (lowest high reliability), class H (high reliability), and class K, (highest...
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