UNLIMITED FREE
ACCESS
TO THE WORLD'S BEST IDEAS

SUBMIT
Already a GlobalSpec user? Log in.

This is embarrasing...

An error occurred while processing the form. Please try again in a few minutes.

Customize Your GlobalSpec Experience

Finish!
Privacy Policy

This is embarrasing...

An error occurred while processing the form. Please try again in a few minutes.

NPFC - MIL-M-38510/508

MICROCIRCUITS, MEMORY, DIGITAL, CMOS ONE-TIME PROGRAMMABLE ARRAY LOGIC, MONOLITHIC SILICON

inactive
Buy Now
Organization: NPFC
Publication Date: 15 November 1990
Status: inactive
Page Count: 20
scope:

This specification covers the detail requirements for monolithic silicon, CMOS, programmable array logic microcircuits which employ a one-time programmable EPROM cell as the programming element. Two product assurance classes (B and S) and a choice of case outlines and lead finishes are provided and are reflected in the complete Part or Identifying Number (PIN).

The PIN shall be in accordance with MIL-M-38510 (see 3.6 herein).

The device types shall be as follows:

Device type Circuit tPD 01 22-input, 10-output, AND-OR logic array 30 ns 02 22-input, 10-output, AND-OR logic array 25 ns 03 22-input, 10-output, AND-OR logic array 20 ns 04 22-input, 10-output, AND-OR logic array 15 ns

The device class shall be the product assurance level as defined in MIL-M-38510.

The case outlines shall be designated as follows:

Outline letter Case outline (see MIL-M-38510, appendix C) K F-6 (24-lead, .640" × .420" × .090"), flat package L D-9 (24-lead, 1.280" × .310" × .200"), dual-in-line package 3 C-4 (28-terminal, .460" × .460" ×.100"), square chip carrier package

Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this document should be addressed to: Rome Air Development Center, (RBE-2), Griffiss AFB, NY 13441, by using the self-addressed Standardization Document Improvement Proposal (DD Form 1426) appearing at the end of this document or by letter.

Supply voltage range - - - - - - - - - - - - - - −0.5 V dc to +7.0 V dc Input voltage range 1/ - - - - - - - - - - - - - - −2.0 V dc to +7.0 V dc Storage temperature range - - - - - - - - - - - - −65°C to 150°C Lead temperature (soldering, 10 seconds)- - - - - +260°C Thermal resistance, junction-to-case (θJC) 2/ - - - - - - See MIL-M-38510, appendix C Output voltage applied in high Z state rang 1/ - - - −0.5 V dc to +7.0 V dc Output sink current - - - - - - - - - - - - - - - 16 mA Maximum power dissipation (PD) - - - - - - - - - 1.2 W Maximum Junction temperature (TJ) - - - - - - - - +175°C

Supply voltage range - - - - - - - - - - - - - - 4.5 V dc minimum to 5.5 V dc maximum Minimum high level input voltage (VIH) - - - - - 2.0 V dc Maximum low level input voltage (VIL) - - - - - - 0.8 V dc Case operating temperature range (TC) - - - - - - −55°C to 125°C

intended Use:

Microcircuits conforming to this specification are intended for use for original equipment design application and logistic support of existing equipment.

Document History

October 5, 2020
Microcircuits, Memory, Digital, CMOS One-Time Programmable Array Logic, Monolithic Silicon
A description is not available for this item.
December 22, 2010
Microcircuits, Memory, Digital, CMOS One-Time Programmable Array Logic, Monolithic Silicon
This specification covers the detail requirements for monolithic silicon, CMOS, programmable array logic microcircuits which employ a one-time programmable EPROM cell as the programming element. Two...
February 27, 2006
MICROCIRCUITS, MEMORY, DIGITAL, CMOS ONE-TIME PROGRAMMABLE ARRAY LOGIC, MONOLITHIC SILICON
This specification covers the detail requirements for monolithic silicon, CMOS, programmable array logic microcircuits which employ a one-time programmable EPROM cell as the programming element. Two...
May 22, 2001
MICROCIRCUITS, MEMORY, DIGITAL, CMOS ONE-TIME PROGRAMMABLE ARRAY LOGIC, MONOLITHIC SILICON
A description is not available for this item.
July 28, 1995
MICROCIRCUITS, MEMORY, DIGITAL, CMOS ONE-TIME PROGRAMMABLE ARRAY LOGIC, MONOLITHIC SILICON
A description is not available for this item.
February 20, 1992
MICROCIRCUITS, MEMORY, DIGITAL, CMOS ONE-TIME PROGRAMMABLE ARRAY LOGIC, MONOLITHIC SILICON
A description is not available for this item.
MIL-M-38510/508
November 15, 1990
MICROCIRCUITS, MEMORY, DIGITAL, CMOS ONE-TIME PROGRAMMABLE ARRAY LOGIC, MONOLITHIC SILICON
This specification covers the detail requirements for monolithic silicon, CMOS, programmable array logic microcircuits which employ a one-time programmable EPROM cell as the programming element. Two...

References

Advertisement