NPFC - MIL-PRF-19500/755
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7588T3, 2N7590T3, 2N7592T3 AND 2N7594T3, JANTXVR, JANTXVF, JANSR AND JANSF
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| Organization: | NPFC |
| Publication Date: | 19 May 2010 |
| Status: | inactive |
| Page Count: | 22 |
scope:
This specification covers the performance requirements for a N-channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor. Two levels of product assurance are provided for each device type as specified in MIL-PRF-19500, with avalanche energy maximum rating (EAS) and maximum avalanche current (IAS).
intended Use:
Semiconductors conforming to this specification are intended for original equipment design applications and logistic support of existing equipment.
Document History
May 31, 2023
TRANSISTOR, FIELD EFFECT, N-CHANNEL, RADIATION HARDENED, SILICON, ENCAPSULATED (THROUGH HOLE PACKAGE), TYPES 2N7588, 2N7590, 2N7592, AND 2N7594, JANTXVR AND F AND JANSR, F, AND G
Scope.
This specification covers the performance requirements for an N-Channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor. Two levels...
August 17, 2022
TRANSISTOR, FIELD EFFECT, N-CHANNEL, RADIATION HARDENED, SILICON, ENCAPSULATED (THROUGH HOLE PACKAGE), TYPES 2N7588, 2N7590, 2N7592, AND 2N7594, JANTXVR AND F AND JANSR, F, AND G
Scope.
This specification covers the performance requirements for an N-Channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor. Two levels...
February 3, 2021
TRANSISTOR, FIELD EFFECT, N-CHANNEL, RADIATION HARDENED, SILICON, ENCAPSULATED (THROUGH HOLE PACKAGE), TYPES 2N7588, 2N7590, 2N7592, AND 2N7594, JANTXVR AND F AND JANSR AND F
Scope.
This specification covers the performance requirements for an N-Channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor. Two levels...
October 4, 2019
TRANSISTOR, FIELD EFFECT, N-CHANNEL, RADIATION HARDENED, SILICON, ENCAPSULATED (THROUGH HOLE PACKAGE), TYPES 2N7588, 2N7590, 2N7592, AND 2N7594, JANTXVR AND F AND JANSR AND H
Scope.
This specification covers the performance requirements for an N-Channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor. Two levels...
February 23, 2018
TRANSISTOR, FIELD EFFECT, N-CHANNEL, RADIATION HARDENED, SILICON, ENCAPSULATED (THROUGH HOLE PACKAGE), TYPES 2N7588, 2N7590, 2N7592, AND 2N7594,JANTXVR AND F AND JANSR AND H
This specification covers the performance requirements for an N-Channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor. Two levels of...
September 14, 2017
TRANSISTOR, FIELD EFFECT, N-CHANNEL, RADIATION HARDENED, SILICON, ENCAPSULATED (THROUGH HOLE PACKAGE), TYPES 2N7588, 2N7590, 2N7592, AND 2N7594,JANTXVR AND F AND JANSR AND H
This specification covers the performance requirements for an N-Channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor. Two levels of...
March 18, 2015
Semiconductor Device, Field Effect Radiation Hardened (Total Dose and Single Event Effects) Transistor, N-Channel, Silicon, Types 2N7588T3, 2N7590T3, 2N7592T3 and 2N7594T3, JANTVR, JANTXVF, JANSR and JANSF
A description is not available for this item.
MIL-PRF-19500/755
May 19, 2010
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7588T3, 2N7590T3, 2N7592T3 AND 2N7594T3, JANTXVR, JANTXVF, JANSR AND JANSF
This specification covers the performance requirements for a N-channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor. Two levels of...