DLA - DSCC-VID-V62/04688 REV A
MICROCIRCUIT, DIGITAL, TRIPLE 3-INPUT POSITIVE NAND GATE, MONOLITHIC SILICON
inactive
| Organization: | DLA |
| Publication Date: | 19 October 2010 |
| Status: | inactive |
| Page Count: | 10 |
scope:
This drawing documents the general requirements of a high performance triple 3-input positive NAND gate microcircuit, with an operating temperature range of -40°C to +125°C.
Document History
December 15, 2022
MICROCIRCUIT, DIGITAL, TRIPLE 3-INPUT POSITIVE NAND GATE, MONOLITHIC SILICON
Scope.
This drawing documents the general requirements of a high performance triple 3-input positive NAND gate microcircuit, with an operating temperature range of -40ºC to +125ºC.
April 18, 2016
MICROCIRCUIT, DIGITAL, TRIPLE 3-INPUT POSITIVE NAND GATE, MONOLITHIC SILICON
This drawing documents the general requirements of a high performance triple 3-input positive NAND gate microcircuit, with an operating temperature range of -40°C to +125°C.
DSCC-VID-V62/04688 REV A
October 19, 2010
MICROCIRCUIT, DIGITAL, TRIPLE 3-INPUT POSITIVE NAND GATE, MONOLITHIC SILICON
This drawing documents the general requirements of a high performance triple 3-input positive NAND gate microcircuit, with an operating temperature range of -40°C to +125°C.
April 15, 2004
MICROCIRCUIT, DIGITAL, TRIPLE 3-INPUT POSITIVE NAND GATE, MONOLITHIC SILICON
A description is not available for this item.