DLA - MIL-S-19500/628
SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, ULTRAFAST, TYPES 1N6690 THROUGH 1N6693, 1N669OUS THROUGH 1N6693US, JANTX, JANTXV, AND JANS
inactive
| Organization: | DLA |
| Publication Date: | 18 November 1994 |
| Status: | inactive |
| Page Count: | 9 |
scope:
This specification covers the detail requirements for silicon, ultrafast power rectifier diodes. Three levels of product assurance are provided for each device type as specified in MIL-S-19500.
See figures 1 and 2.
Document History
April 1, 2020
SEMICONDUCTOR DEVICE, DIODE, SILICON, ULTRA-FAST RECOVERY, POWER RECTIFIER,1N6690 THROUGH 1N6693, JAN, JANTX, JANTXV, AND JANS
Scope.
This specification covers the performance requirements for a silicon, ultra-fast recovery, semiconductor power rectifier diode. Three levels of product assurance are provided for each device...
May 6, 2019
SEMICONDUCTOR DEVICE, DIODE, SILICON, ULTRA-FAST RECOVERY, POWER RECTIFIER, 1N6690 THROUGH 1N6693, 1N6690US THROUGH 1N6693US JAN, JANTX, JANTXV, AND JANS
A description is not available for this item.
July 29, 2014
SEMICONDUCTOR DEVICE, DIODE, SILICON, ULTRA-FAST RECOVERY, POWER RECTIFIER, 1N6690 THROUGH 1N6693, 1N6690US THROUGH 1N6693US JAN, JANTX, JANTXV, AND JANS
This specification covers the performance requirements for a silicon, ultra-fast recovery, semiconductor power rectifier diode. Three levels of product assurance are provided for each device type as...
August 24, 2012
SEMICONDUCTOR DEVICE, DIODE, SILICON, ULTRA-FAST RECOVERY, POWER RECTIFIER, 1N6690 THROUGH 1N6693, 1N6690US THROUGH 1N6693US JAN, JANTX, JANTXV, AND JANS
This specification covers the performance requirements for a silicon, ultra-fast recovery, semiconductor power rectifier diode. Three levels of product assurance are provided for each device type as...
July 15, 2011
Semiconductor Device, Diode, Silicon, Power Rectifier, Ultrafast, Types 1N6690 through 1N6693, 1N6690US through 1N6693US, JAN, JANTX, JANTXV, and JANS
A description is not available for this item.
November 22, 2000
SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, ULTRAFAST, TYPES 1N6690 THROUGH 1N6693, 1N669OUS THROUGH 1N6693US, JAN, JANTX, JANTXV, AND JANS
A description is not available for this item.
June 12, 1998
SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, ULTRAFAST, TYPES 1N6690 THROUGH 1N6693, 1N669OUS THROUGH 1N6693US, JAN, JANTX, JANTXV, AND JANS
This specification covers the performance requirements for silicon, ultrafast power rectifier diodes. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500.
MIL-S-19500/628
November 18, 1994
SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, ULTRAFAST, TYPES 1N6690 THROUGH 1N6693, 1N669OUS THROUGH 1N6693US, JANTX, JANTXV, AND JANS
This specification covers the detail requirements for silicon, ultrafast power rectifier diodes. Three levels of product assurance are provided for each device type as specified in MIL-S-19500.
See...