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NPFC - MIL-PRF-19500/745

TRANSISTOR, FIELD EFFECT TRANSISTOR, P-CHANNEL, RADIATION HARDENED, LOGIC-LEVEL SILICON, TYPES 2N7626, JANTXV AND JANS

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Organization: NPFC
Publication Date: 23 October 2018
Status: inactive
Page Count: 19

Document History

November 25, 2020
TRANSISTOR, FIELD EFFECT TRANSISTOR, P-CHANNEL, RADIATION HARDENED, LOGIC-LEVEL SILICON, TYPES 2N7626, JANTXV AND JANS
Scope. This specification covers the performance requirements for a P-channel, enhancement-mode, radiation hardened (total dose and single event effects (SEE), low-threshold logic level, MOSFET,...
October 30, 2019
TRANSISTOR, FIELD EFFECT TRANSISTOR, P-CHANNEL, RADIATION HARDENED, LOGIC-LEVEL SILICON, TYPES 2N7626, JANTXV AND JANS
Scope. This specification covers the performance requirements for a P-channel, enhancement-mode, radiation hardened (total dose and single event effects (SEE), low-threshold logic level, MOSFET,...
MIL-PRF-19500/745
October 23, 2018
TRANSISTOR, FIELD EFFECT TRANSISTOR, P-CHANNEL, RADIATION HARDENED, LOGIC-LEVEL SILICON, TYPES 2N7626, JANTXV AND JANS
A description is not available for this item.
July 26, 2017
Semiconductor Device, Field Effect Transistor, P-Channel, Radiation Hardened (Total Dose and Single Event Effects), Logic- Level Silicon, Types 2N7626UB, 2N7626UBC, 2N7626UBN, 2N7626UBCN, JANTXVR, JANTXVF, JANSR, and JANSF
A description is not available for this item.
August 27, 2012
SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, P-CHANNEL, RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS), LOGIC-LEVEL SILICON, TYPES 2N7626UB, 2N7626UBC, 2N7626UBN, 2N7626UBCN, JANTXVR, JANTXVF, JANSR, AND JANSF
This specification covers the performance requirements for a P-channel, enhancement-mode, radiation hardened (total dose and single event effects (SEE)), low-threshold logic level, MOSFET,...
May 13, 2011
SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, P-CHANNEL, RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS), LOGIC-LEVEL SILICON, TYPES 2N7626UB, 2N7626UBC, 2N7626UBN, 2N7626UBCN, JANTXVR, JANTXVF, JANSR, AND JANSF
This specification covers the performance requirements for a P-channel, enhancement-mode, radiation hardened (total dose and single event effects (SEE)), low-threshold logic level, MOSFET,...
March 18, 2010
SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, P-CHANNEL, RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS), LOGIC-LEVEL SILICON, TYPES 2N7626UB, 2N7626UBC, 2N7626UBN, 2N7626UBCN, JANTXVR, JANTXVF, JANSR, AND JANSF
This specification covers the performance requirements for a P-channel, enhancement-mode, radiation hardened (total dose and single event effects (SEE)), low-threshold logic level, MOSFET,...
February 26, 2009
SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, P-CHANNEL, RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS), LOGIC-LEVEL SILICON, TYPES 2N7626UB, 2N7626UBC, JANTXVR, JANTXVF, JANSR, AND JANSF
This specification covers the performance requirements for a P-channel, enhancement-mode, radiation hardened (total dose and single event effects (SEE)), low-threshold logic level, MOSFET,...
June 5, 2008
SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, P-CHANNEL, RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS), LOGIC-LEVEL SILICON, TYPES 2N7626UB, 2N7626UBC, JANTXVR, JANTXVF, JANSR, AND JANSF
This specification covers the performance requirements for a P-channel, enhancement-mode, radiation hardened (total dose and single event effects (SEE)), low-threshold logic level, MOSFET,...
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