IEC 60749-23
Semiconductor devices – Mechanical and climatic test methods – Part 23: High temperature operating life
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| Organization: | IEC |
| Publication Date: | 1 March 2011 |
| Status: | active |
| Page Count: | 10 |
| ICS Code (Semiconductor devices in general): | 31.080.01 |
scope:
This test is used to determine the effects of bias conditions and temperature on solid state devices over time. It simulates the device operating condition in an accelerated way, and is primarily used for device qualification and reliability monitoring. A form of high temperature bias life using a short duration, popularly known as "burn-in", may be used to screen for infant mortality related failures. The detailed use and application of burn-in is outside the scope of this standard.
Document History
IEC 60749-23
March 1, 2011
Semiconductor devices – Mechanical and climatic test methods – Part 23: High temperature operating life
This test is used to determine the effects of bias conditions and temperature on solid state devices over time. It simulates the device operating condition in an accelerated way, and is primarily...
January 1, 2011
AMENDMENT 1 Semiconductor devices – Mechanical and climatic test methods – Part 23: High temperature operating life
A description is not available for this item.
February 1, 2004
Semiconductor devices Mechanical and climatic test methods Part 23: High temperature operating life
A description is not available for this item.