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NPFC - MIL-PRF-19500/646

SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, ULTRAFAST, TYPES 1N6774 THROUGH 1N6777, JAN, JANTX, JANTXV, AND JANS

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Organization: NPFC
Publication Date: 15 February 2019
Status: active
Page Count: 12
scope:

This specification covers the performance requirements for silicon, ultrafast, power rectifier diode. Four levels of product assurance (JAN, JANTX, JANTXV, and JANS) are provided for each device type as specified in MIL-PRF-19500.

intended Use:

Semiconductors conforming to this specification are intended for original equipment design applications and logistic support of existing equipment.

Document History

MIL-PRF-19500/646
February 15, 2019
SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, ULTRAFAST, TYPES 1N6774 THROUGH 1N6777, JAN, JANTX, JANTXV, AND JANS
This specification covers the performance requirements for silicon, ultrafast, power rectifier diode. Four levels of product assurance (JAN, JANTX, JANTXV, and JANS) are provided for each device type...
December 6, 2013
Semiconductor Device, Diode, Silicon, Power Rectifier, Ultrafast, Types 1N6774 through 1N6777, JAN, JANTX, JANTXV, and JANS
A description is not available for this item.
November 26, 2008
SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, ULTRAFAST, TYPES 1N6774 THROUGH 1N6777, JAN, JANTX, JANTXV, AND JANS
This specification covers the performance requirements for silicon, ultrafast, power rectifier diode. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500.
March 25, 2008
SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, ULTRAFAST, TYPES 1N6774 THROUGH 1N6777, JAN, JANTX, JANTXV, AND JANS
This specification covers the performance requirements for silicon, ultrafast, power rectifier diode. Four levels of product assurance are provided for oath device type as specified in MIL-PRF-19500.
June 18, 2007
SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, ULTRAFAST, TYPES 1N6774 THROUGH 1N6777, JAN, JANTX, JANTXV, AND JANS
This specification covers the performance requirements for silicon, ultrafast, power rectifier diodes in a center-tap configuration. Four levels of product assurance are provided for oath device type...
October 24, 2005
SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, DUAL, ULTRAFAST, TYPES 1N6774 THROUGH 1N6777 JAN, JANTX, JANTXV, AND JANS
This specification covers the performance requirements for silicon, ultrafast, power rectifier diodes in a center-tap configuration. Four levels of product assurance are provided for oath device type...
June 16, 2003
SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, ULTRAFAST, TYPES 1N6774 THROUGH 1N6777 JAN, JANTX, JANTXV, AND JANS
A description is not available for this item.
August 16, 1998
SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, ULTRAFAST, TYPES 1 N6774 THROUGH 1 N6777 JAN, JANTX, JANTXV, AND JANS
This specification covers the performance requirements for silicon, ultrafast, power rectifier diodes. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500.
April 18, 1997
SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, ULTRAFAST, TYPES 1N6774 THROUGH 1N6777, JAN, JANTX, JANTXV, AND JANS
This specification covers the performance requirements for silicon, ultrafast, power rectifier diodes. Three levels of product assurance are provided for each device type as specified in...

References

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