DIN 50454-1
Testing of materials for semiconductor technology - Determination of dislocations in monocrystals of III-V-compound semi-conductors - Part 1: Gallium arsenide
inactive, Most Current
| Organization: | DIN |
| Publication Date: | 1 July 2000 |
| Status: | inactive |
| Page Count: | 9 |
| ICS Code (Semiconducting materials): | 29.045 |
Document History
DIN 50454-1
July 1, 2000
Testing of materials for semiconductor technology - Determination of dislocations in monocrystals of III-V-compound semi-conductors - Part 1: Gallium arsenide
A description is not available for this item.
July 1, 1999
Testing of materials for semiconductor technology - Determination of dislocations in monocrystals of III-V-compound semi-conductors - Part 1: Gallium arsenide
A description is not available for this item.
November 1, 1991
Testing of materials for semiconductor technology; determination of the dislocations etch pits density in monocrystals of III-V-compound semiconductors; galliumarsenide
A description is not available for this item.
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