DLA - DSCC-DWG-V62/19617
MICROCIRCUIT, LINEAR, GaAs, pHEMT, MMIC, 0.01 GHz to 10 GHz LOW NOISE AMPLIFIER, MONOLITHIC SILICON
inactive
| Organization: | DLA |
| Publication Date: | 7 August 2019 |
| Status: | inactive |
| Page Count: | 14 |
scope:
Scope.
This drawing documents the general requirements of a high performance gallium arsenide (GaAs), pseudomorphic high electron mobility transistor (pHEMT), monolithic microwave integrated circuit (MMIC), 0.01 GHz to 10 GHz, low noise amplifier microcircuit with an operating temperature range of -55°C to +125°C.
Document History
December 6, 2023
MICROCIRCUIT, LINEAR, GaAs, pHEMT, MMIC, 0.01 GHz to 10 GHz LOW NOISE AMPLIFIER, MONOLITHIC GALLIUM ARSENIDE
Scope.
This drawing documents the general requirements of a high performance gallium arsenide (GaAs), pseudomorphic high electron mobility transistor (pHEMT), monolithic microwave integrated circuit...
DSCC-DWG-V62/19617
August 7, 2019
MICROCIRCUIT, LINEAR, GaAs, pHEMT, MMIC, 0.01 GHz to 10 GHz LOW NOISE AMPLIFIER, MONOLITHIC SILICON
Scope.
This drawing documents the general requirements of a high performance gallium arsenide (GaAs), pseudomorphic high electron mobility transistor (pHEMT), monolithic microwave integrated circuit...