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DLA - SMD-5962-88549 REV A

MICROCIRCUIT, DIGITAL, CMOS, UV ERASABLE PROGRAMMABLE LOGIC DEVICE, MONOLITHIC SILICON

inactive
Organization: DLA
Publication Date: 17 April 1992
Status: inactive
Page Count: 20
scope:

This drawing describes device requirements for class B microcircuits in accordance with 1.2.l of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices".

The complete part number shall be as shown in the following example:

The device types shall identify the circuit function as follows:

Device type Generic number Circuit function Access time 01 (See 6.4) 1800 gate CMOS UV EPLD 90 ns 02 (See 6.4) 1800 gate CMOS UV EPLD 75 ns

The case outlines shall be as designated in appendix C of MIL-M-38510, and as follows:

Outline letter Case Outline X P-AC (68-terminal, 1.180" × 1.180" × .345"), pin grid array package Y P-BC (68-terminal, 1.135" × 1.135" × .345"), pin grid array package Z See figure 1, (68-terminal, 1.870" × 1.870" × .145"), flat package

Supply voltage range (VCC) - - - - - - - - - - - - - - −0.5 V dc to +7.0 V dc Programming supply voltage range (VPP - - - - - - - - −0.5 V dc to +13.5 V dc DC input voltage range (VIN) 1/- - - - - - - - - - - - −0.5 V dc to VCC + 0.5 V dc DC output voltage range (VO) - - - - - - - - - - - - - −0.5 V dc to VCC + 0.5 V dc DC output current (IO) - - - - - - - - - - - - - - - - ±25 mA dc Storage temperature range- - - - - - - - - - - - - - - −65°C to +150°C Maximum power dissipation (PD) - - - - - - - - - - - - 1.5 W Lead temperature (soldering, 10 seconds) - - - - - - - +300°C Thermal resistance, junction-to-case (θJC) - - - - - - See MIL-M-38510, appendix C Junction temperature (TJ) - - - - - - - - - - - - - - +200°C DC supply current (ICC or ISS) - - - - - - - - - - - - ±300 mA

Supply voltage range (VCC) - - - - - - - - - - - - 4.5 V dc to 5.5 V dc High level input voltage range (VIH) - - - - - - - 2.0 V dc to VCC + 0.3 V dc Low level input voltage range (VIL)- - - - - - - - −0.3 V dc to +0.8 V dc Input rise time (tr) - - - - - - - - - - - - - - - 500 ns maximum Input fall time (tf) - - - - - - - - - - - - - - - 500 ns maximum Supply voltage rise time (trvcc) - - - - - - - - - 10 ms maximum Clock rise time (trclk)- - - - - - - - - - - - - - 100 ns maximum Clock fall time (tfclk)- - - - - - - - - - - - - - 100 ns maximum Case operating temperature range (TC)- - - - - - - −55°C to +125°C

intended Use:

Microcircuits conforming to this drawing are intended for use when military specifications do not exist and qualified military devices that will perform the required function are not available for... View More

Document History

February 8, 2018
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, UV ERASABLE, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
June 20, 2011
MICROCIRCUITS, MEMORY, DIGITAL, CMOS, UV ERASABLE, PROGRAMMABLE LOGIC DEVICE
Microcircuits conforming to this drawing are intended for use for government microcircuit applications (original equipment), design applications, and logistics purposes.
SMD-5962-88549 REV A
April 17, 1992
MICROCIRCUIT, DIGITAL, CMOS, UV ERASABLE PROGRAMMABLE LOGIC DEVICE, MONOLITHIC SILICON
This drawing describes device requirements for class B microcircuits in accordance with 1.2.l of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices"....
July 12, 1989
MICROCIRCUIT, DIGITAL, CMOS, UV ERASABLE PROGRAMMABLE LOGIC DEVICE, MONOLITHIC SILICON
A description is not available for this item.

References

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